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Posts Tagged ‘Non-Volatile Memory Bit Cell’

“Novel New Vertically-Oriented, Antifuse Non-Volatile Memory Bit Cell” by Harry Luan, CTO of Kilopass Technology

Monday, October 22nd, 2012

Article source: Kilopass Technology

Harry Luan, chief technology officer at Kilopass Technology Inc., a leading provider of semiconductor logic non-volatile memory (NVM) intellectual property (IP) presenting “Novel New Vertically-Oriented, Antifuse Non-Volatile Memory Bit Cell” at MemCon 2012 on Tuesday, September 18, at 2:15 p.m. at the Santa Clara Convention Center, Santa Clara, Calif.

The new embedded VCM (Vertical Cross-point Memory) NVM IP bit cell quadruples the density of today’s anti-fuse NVM IP bit cell. The VCM bit cell will make possible program storage where today’s embedded non-volatile memory (eNVM) technology is cost-prohibitive or unavailable at capacities of 4Mb to 32Mb. It will also enable a higher level of performance more similar to SRAM compared to existing slower eNVM technologies or external flash or EEPROM chips.

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