Samsung Begins Mass Production of 10nm-class 16Gb LPDDR4X DRAM for Automobiles

The new 16Gb LPDDR4X DRAM features exceptionally high thermal endurance, with warranties for up to 125°C

SEOUL, South Korea — (BUSINESS WIRE) — April 24, 2018 — Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing 10-nanometer (nm)-class* 16-gigabit (Gb) LPDDR4X DRAM for automobiles. The latest LPDDR4X features high performance and energy efficiency while significantly raising the thermal endurance level for automotive applications that often need to operate in extreme environments. The 10nm-class DRAM will also enable the industry’s fastest automotive DRAM-based LPDDR4X interface with the highest density.

This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20180424006733/en/

Samsung 10nm-class 16Gb LPDDR4X DRAM for Automobiles (Photo: Business Wire)

Samsung 10nm-class 16Gb LPDDR4X DRAM for Automobiles (Photo: Business Wire)

“The 16Gb LPDDR4X DRAM is our most advanced automotive solution yet, offering global automakers outstanding reliability, endurance, speed, capacity and energy efficiency,” said Sewon Chun, senior vice president of memory marketing at Samsung Electronics. “Samsung will continue to closely collaborate with manufacturers developing diverse automotive systems, in delivering premium memory solutions anywhere.”

Moving a step beyond its 20nm-class ‘Automotive Grade 2’ DRAM, which can withstand temperatures from -40°C to 105°C, Samsung’s 16Gb LPDDR4X is Automotive Grade 1-compliant, raising the high-end threshold to 125°C. By more than satisfying the rigorous on-system thermal cycling tests of global auto manufacturers, the 16Gb LPDDR4X has enhanced its reliability for a wide variety of automotive applications in many of the world’s most challenging environments.

Adding to the degree of reliability under high temperatures, production at an advanced 10nm-class node is key to enabling the 16Gb LPDDR4X to deliver its leading-edge performance and power efficiency. Even in environments with extremely high temperatures of up to 125°C, its data processing speed comes in at 4,266 megabits per second (Mbps), a 14 percent increase from the 8Gb LPDDR4 DRAM that is based on 20nm process technology, and the new memory also registers a 30 percent increase in power efficiency.

Along with a 256 gigabyte (GB) embedded Universal Flash Storage (eUFS) drive announced in February, Samsung has expanded its advanced memory solution lineup for future automotive applications with the 10nm-class 16Gb LPDDR4X DRAM, commercially available in 12Gb, 16Gb, 24Gb and 32Gb capacities. While extending its 10nm-class DRAM offerings, the company also plans on bolstering technology partnerships for automotive solutions that include vision ADAS (Advanced Driver Assistance Systems), autonomous driving, infotainment systems and gateways.

About Samsung Electronics Co., Ltd.

Samsung inspires the world and shapes the future with transformative ideas and technologies. The company is redefining the worlds of TVs, smartphones, wearable devices, tablets, digital appliances, network systems, and memory, system LSI, foundry and LED solutions. For the latest news, please visit the Samsung Newsroom at http://news.samsung.com.

*Editor’s Note: 10nm-class is a process node between 10 and 19 nanometers



Contact:

for Samsung Semiconductor, Inc.
John E. Lucas, APR, 925-872-2287
Email Contact




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