Toshiba Releases Small MOSFET with High ESD Protection to Drive Headlight LED

TOKYO — (BUSINESS WIRE) — March 26, 2018Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has released a dual MOSFET “SSM6N813R” with high ESD protection positioned for use in automotive applications, including as a driver IC for headlight LEDs, which require a high withstand voltage and a small footprint. Mass production shipments begin in April.

This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20180326005358/en/

Toshiba: A dual MOSFET "SSM6N813R" with high ESD protection positioned for use in automotive applica ...

Toshiba: A dual MOSFET "SSM6N813R" with high ESD protection positioned for use in automotive applications, including as a driver IC for headlight LEDs. (Photo: Business Wire)

A maximum drain-source voltage (VDSS) of 100V ensures that SSM6N813R is suitable for headlight applications requiring multiple LEDs—a capability supported by high ESD immunity. Fabricated using the latest process and housed in a TSOP6F package, SSM6N813R has an allowable power dissipation of 1.5W and low on-resistance. In addition, the footprint of the TSOP6F package is 70% smaller than that of an SOP8 package.

Applications

  • Automotive headlight LED driver

Features

  • Small package
  • High ESD protection
  • Low RDS(ON)
 

Main Specifications

(@Ta=25℃)

Items
(Ta=25℃)

  SSM6N813R
Absolute maximum ratings  

Drain-source voltage
VDSS (V)

100

Gate-source voltage
VGSS (V)

+/-20

Drain current
ID (A)

3.5
Electrical Characteristics

Drain-source on-resistance
RDS(ON) max
(mΩ)

  V GS =10V 112
V GS =4.5V 154

Input capacitance
C iss typ. (pF)

242
Package   TSOP6F   2.9mm×2.8mm; t=0.8mm
 

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