Toshiba Electronic Devices & Storage Corporation Unveils New-Generation 600V Planar MOSFET Series

- π-MOS IX series of 600V planar MOSFET combines high efficiency and low noise -

TOKYO — (BUSINESS WIRE) — January 9, 2018Toshiba Electronic Devices & Storage Corporation today announced the launch of “π-MOS IX,” a new series of 600V planar MOSFET. Mass production starts today.

This press release features multimedia. View the full release here: http://www.businesswire.com/news/home/20180109006889/en/

Toshiba Electronic Devices & Storage Corporation: a new series of 600V planar MOSFET "π-MOS IX" (Pho ...

Toshiba Electronic Devices & Storage Corporation: a new series of 600V planar MOSFET "π-MOS IX" (Photo: Business Wire)

With an optimized chip design, the π-MOS IX series provides 5dB lower[1] peak EMI noise than the current π-MOS VII series, while maintaining the same level of efficiency. It offers greater design freedom and therefore helps reduce design workloads. In addition, the π-MOS IX series has the same rated avalanche current and rated DC current, making it simple to replace existing MOSFET.

Toshiba Electronic Devices & Storage Corporation will expand the π-MOS IX series with the addition of more 600V devices, plus 500V and 650V devices.

Applications

  • Small to medium switching power supplies for notebook PC AC adapters and game console chargers
  • Lighting power supplies

Features

  • Combines high efficiency and low noise
  • Rated avalanche current equivalent to the rated DC current
 

Main Specifications

Part Number   Package  

Absolute Maximum
Rating

 

RDS(ON)
MAX (Ω)
at VGS=10V

 

Qg
Typ.
(nC)

 

Ciss
Typ.
(pF)

 

Current generation
(π-MOS VII series)
Part Number

VDSS (V)   ID (A)
TK650A60F TO-220SIS 600 11 0.65 34 1320 TK11A60D
TK750A60F TO-220SIS 600 10 0.75 30 1130 TK10A60D
TK1K2A60F TO-220SIS 600 6 1.2 20.5 740

TK6A60D (1.25Ω)

TK1K9A60F   TO-220SIS   600   3.7   1.9   14   490  

TK4A60DB (2.0Ω)

 

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