Memory technologies are changing, per Weebit Nano CEO Coby Hanoch. In a recent phone call he said, “The current technologies, Flash and so on, have been around for a long time and are starting to hit the wall, which is why we’re seeing people going to things like 3D memories.
“At Weebit, however, we are focusing on Resistive RAM – developing the technology with help from Leti Labs in Grenoble, France. With the assistance of Leti, we have been able to develop a 4k-bit memory array on 300-nanometer wafers.
“Now we are working to achieve our goal of 40 nanometers before the end of the year. We expect to have single cells at 40 nanometers very soon, and will work on 4k-bit arrays immediately after that.”
Weebit Nano is not the only company pursuing new, alternative options for memory.
Per Hanoch: “There are actually quite a few players in this market – including big companies like Intel and Samsung – all working on different types of technology, because not everyone agrees as which technology will be the future of memory.
