To say this is the year of the finFET is somewhat of an understatement, because everywhere you go somebody’s talking about going up instead of out – at ISSCC, at DesignCon, at DVCon, at ISQED, at SNUG, at EDPS, at DAC.
Among the talks so far, one of the best was given by the father of the finFET himself, U.C. Berkeley’s Chenming Hu. If you were at ISQED in Santa Clara on March 5th, you heard Prof. Hu describe how increasing leakage current in planar devices motivated radical new thinking in the late 1990s: Instead of a classic source, drain, gate structure, take a thin film of high-quality silicon material, place gate-dielectric above and below it such that the silicon is never very far from the gate, and then turn the thing 90 degrees so that the source is out the back, the drain’s in front, and the gate material is vertical.
