In the blog ‘Custom Compiler In-Design Assistants (Part 2)’, I outlined how we can use StarRC to report capacitances on critical nets in the layout even when the design is still in flux and not completely LVS-clean. In addition to capacitance reports, we also showed resistance reporting which is critical for FinFET-based layouts. At advanced nodes, the impact of parasitics, electromigration (EM) and restricted design rules drive critical layout choices. Interconnect that does not meet resistance, or EM criteria and unbalanced capacitances on matched nets, can and often does adversely impact layout schedules. So the earlier in the layout phase the layout engineer can address these issues, the sooner he or she can close the design.
EM in particular is a notorious problem in the FinFET process due to the high drive of the transistors and thin metals. So let’s say, for example, the layout engineer has to route a critical net which could be susceptible to the impact of EM. This is a non-trivial task that could be quite challenging. However, if you use Custom Compiler, there are some very cool capabilities that make laying out interconnect that meets EM criteria very quick and very easy.
