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maxish
(Stranger )
10/03/06 12:07 PM
MOSFET modeling (berkeley SPICE vs P/HSpice) Report this article as Inappropriate to us !!!Login to Reply

Hello,

I have a model for a Motorola MOSFET - mtp6n60/mc. I get an error about several mosfet parameters (LAMBDA one of them) when trying to simulate it in Multisim- an XPICE/SPICE3F5 based simulator. The model is specified as a "Level 3" mosfet and according to Berkeley SPICE3F5 specs, the error inducing parameters are not supported in level 3, so the error makes sense. In fact, no SPICE model level supports the set of parameters in my model if used together. My guess is that this model is created specificaly for PSPICE or HSPICE who deviate from SPICE3F5 slightly.

Does anyone have a suggestion on how to best simulate this model in basic Berkely SPICE3F5? I tried commenting out these several parameters but that rendered the model almost useless.

Thanks,

Max

SPICE model:

.subckt mtp6n60/mc 10 20 30


* 10 = Drain 20 = Gate 30 = Source
*
******************************************************************************
*
*------------------------ EXTERNAL PARASITICS --------------------------------
* PACKAGE INDUCTANCE
*
LDRAIN 10 11 4.5e-09
LGATE 20 21 7.5e-09
LSOURCE 30 31 7.5e-09
*
* RESISTANCES
*
RDRAIN1 4 11 RDRAIN 0.8036
RDRAIN2 4 5 RDRAIN 0.0084
RSOURCE 31 6 RSOURCE 0.02018
RDBODY 8 30 RDBODY 0.0135
*
RGATE 21 2 5
*
*--------------------------------------------------------------------------
*
*--------------- CAPACITANCES AND BODY DIODE ------------------------------
*
DBODY 8 11 DBODY
DGD 3 11 DGD
CGDMAX 2 3 2.7e-09
RGDMAX 2 3 1e+08
CGS 2 6 1.31e-09
*
*--------------------------------------------------------------------------
*
*----------------------- CORE MOSFET --------------------------------------
*
M1 5 2 6 6 MAIN
*
*--------------------------------------------------------------------------
*
.MODEL RDRAIN RES (
+TC1 = 0.008891
+TC2 = 3.056e-05)
*
.MODEL RSOURCE RES (
+TC1 = -0.003198
+TC2 = 2.60004e-05)
*
.MODEL RDBODY RES (
+TC1 = 0.003945
+TC2 = 9.54752e-06)
*
*
.MODEL MAIN NMOS (
+LEVEL = 3
+VTO = 3.8
+KP = 13
+GAMMA = 2.6
+PHI = 0.6
+LAMBDA = 0.0019
+RD = 0
+RS = 0
+CBD = 0
+CBS = 0
+IS = 1e-14
+PB = 0.8
+CGSO = 0
+CGDO = 0
+CGBO = 0
+RSH = 0
+CJ = 0
+MJ = 0.5
+CJSW = 0
+MJSW = 0.33
+JS = 1e-14
+TOX = 1e-07
+NSUB = 1e+15
+NSS = 0
+NFS = 6.59e+11
+TPG = 1
+XJ = 0
+LD = 0
+UO = 600
+UCRIT = 1000
+UEXP = 0
+UTRA = 0
+VMAX = 0
+NEFF = 1
+KF = 0
+AF = 1
+FC = 0.5
+DELTA = 0
+THETA = 0
+ETA = 0
+KAPPA = 0.2)
*
*--------------------------------------------------------------------------
*
.MODEL DGD D (
+IS = 1e-15
+RS = 0
+N = 1000
+TT = 0
+CJO = 1.129e-09
+VJ = 1.943
+M = 1.476
+EG = 1.11
+XTI = 3
+KF = 0
+AF = 1
+FC = 0.5
+BV = 10000
+IBV = 0.001)
*
*--------------------------------------------------------------------------
*
.MODEL DBODY D (
+IS = 1.532e-11
+RS = 0
+N = 1.062
+TT = 2.5e-07
+CJO = 9.725e-10
+VJ = 1.127
+M = 0.6627
+EG = 1.11
+XTI = 5
+KF = 0
+AF = 1
+FC = 0.5
+BV = 671
+IBV = 0.00025)
.ENDS





Edited by maxish on 10/03/06 03:08 PM.




Entire thread
SubjectPosted byPosted on
*MOSFET modeling (berkeley SPICE vs P/HSpice) maxish   10/03/06 12:07 PM
.*buggy maxish   10/31/06 01:48 PM
.*MOSFET not simulator problem maxish   11/06/06 02:04 PM
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