HVVi Semiconductors Announces First HVVFET Power Transistors for DME Applications at European Microwave Week

AMSTERDAM, THE NETHERLANDS -- (MARKET WIRE) -- Oct 27, 2008 -- HVVi Semiconductors, Inc., a developer of silicon RF power transistors, announced today the company's first products for airborne Distance Measuring Equipment (DME) applications operating in the 1025 to 1150 MHz frequency band. Based on the industry's first High Voltage Vertical Field Effect Transistor (HVVFET™) architecture, the new HVV1012-060, HVV1012-100 and HVV1012-250 RF transistors deliver higher output power and gain in a smaller package than competitive technologies. By complementing previously announced products in the 1.2 to 1.4 GHz and 1030 to 1090 MHz bands, the new devices extend HVVi Semiconductors' growing product portfolio across all three pulsed applications in the L-band frequency. HVVI will be exhibiting its complete line of HVVFET RF transistors for pulsed radar applications in Stand 1413 at the RAI Centre in Amsterdam from October 28-30 at European Microwave Week, the leading microwave, RF, wireless and radar conference in Europe.

"Today's commercial and military radar systems designers are facing constant pressure to build higher performance solutions in smaller, lighter and more highly ruggedized configurations, particularly in airborne applications," said Wil Salhuana, HVVi President. "Using the industry's first high frequency, high voltage vertical field effect transistor (HVVFET) architecture, our new RF power transistors allow designers of airborne DME systems to improve performance, reduce product footprint and weight, and maximize system reliability at the same time."

Eliminating Amplification Stages

The three new power transistors allow designers to build high density, high impedance systems in easy-to-match 48V components. Designed for L-band avionics applications operating between 1025 MHz to 1150 MHz, the HVV1012-060 RF transistor is designed for 48V operation and delivers over 60W of pulsed output power. The new device delivers 23 dB of gain when pulse width = 10 µsec and pulse duty cycle = 1% at VDD = 48V and IDQ = 25 mA. To help boost system reliability, the HVV1012-060 is specified to withstand a 20:1 VSWR over all phase angles at the rated output power and operating voltage across the entire frequency band.

The HVV1012-100 RF transistor is also designed for L-band applications in the 1025 to 1150 MHz frequency band. It also operates off a 48V supply voltage and delivers over 100W of pulsed output power. The new transistor offers a power gain of 20.5 dB under a pulse width of 10 µsec and a pulse duty cycle of 1% at VDD = 48V and IDQ = 50 mA. Like the HVV1012-060, the new device is specified to withstand a 20:1 VSWR.

The third product in the family, the HVV1012-250 RF transistor, delivers over 250W of pulsed output power. Operating off a 48V supply, the transistor offers a gain of 20 dB with a pulse width = 10 µsec and pulse duty cycle = 1% at VDD = 48V and IDQ = 100 mA. Like the other products in the family, this device is specified to withstand a 20:1 VSWR over all phase angles at the rated output power and operating voltage across the entire frequency band.

From a system's perspective, the HVVFET architecture's unique performance advantages in terms of gain, efficiency and impedance allow designers to eliminate amplification stages in Power Amplifiers (PAs), reduce parts count, and shrink PCB space requirements. For example, designers building a 1 kW PA can use the HVV1012-060 to drive multiple HVV1012-250 devices and replace three-stage amplifiers using comparable LDMOS or bipolar components. A complete 48V-compatible product line simplifies power supply design and minimizes power supply circuitry. At the same time, the technology's higher rated ruggedness allows system designers to eliminate bulky and costly isolators and, in the process, significantly reduce system weight and size, a key consideration in weight- and space-constrained avionics environments.

Price and Availability

All three devices are sampling immediately and come in a compact HV400-style, two-lead metal flanged package with liquid crystal polymer lid. The package is MIL-STD-883 qualified. The HVV1012-060 sells for $199.01 in 1-24 unit quantities, the HVV1012-100 costs $226.15 in 1-24 quantities and the HVV1012-250 is available for $398.31 in 1-24 quantities. Orders may be placed with Richardson Electronics www.rfwireless.rell.com , 1-800-RF POWER or (1-800-737-6937), in France +, or contact HVVi at Email Contact.

About HVVi Semiconductors

HVVi Semiconductors, Inc. is a developer and supplier of silicon power transistors for radar and avionics applications. The company develops new power solutions based on its innovative new High Voltage Vertical Field Effect Transistor (HVVFET) architecture. Using this proprietary, silicon-based device architecture, HVVi Semiconductors, Inc. is developing a new generation of power transistors that offer dramatic improvements in power output, frequency performance, and power efficiency. This new technology will allow OEMs in the radar and avionics markets to improve system performance and reliability while reducing system and operating costs. HVVi Semiconductors, Inc. is headquartered in Phoenix, Arizona. The company's investors include Mobius, Advanced Technology Ventures, Horizon Ventures and ON Semiconductor. For more information, please visit the company website: www.hvvi.com.

For More Information
Headquarters Contact:
Daniel Ong
HVVi Semiconductors
+1 480-776-3800

Email Contact

Agency Contact:
Matt Quint
Quint Public Relations
+1 650-599-9450

Email Contact

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