OSRAM Opto Semiconductors Develops High-Intensity Green Chip

SANTA CLARA, Calif.—(BUSINESS WIRE)—June 28, 2007— World light-emitting diode (LED) technology leader, OSRAM Opto Semiconductors, is developing a low current, high-power green 1 mm2 chip, featuring the latest in ThinGaN technology. With unprecedented brightness values of more than 180 lm, the new green chip will be used in the company's DRAGON(R) and OSTAR(R) LEDs, and is targeted for LCD display backlighting applications.

"A new epitaxial process and improved chip design, as well as low power consumption, have given this new green chip a major boost in efficiency and brightness that makes it ideal for display backlighting applications," Dr. Matthias Peter, development engineer at OSRAM Opto Semiconductors, said.

The new 180 lm green chip from OSRAM has a power consumption of 1.4 W, achieves 72 lm/W, and features a wavelength of 527 nm from an operating current of 1 A. In comparison, the existing green Platinum DRAGON(R) LED produces 100 lm from an operating current of 1 A.

With a current range of 100 to 350mA, and a power consumption of 1 W, the new green chip from OSRAM provides an efficient and cool base, as well as uniform and increased brightness over large display diagonals with less LEDs.

The new green chips from OSRAM are expected to go into series production by the third quarter of 2008.

About OSRAM Opto Semiconductors

OSRAM Opto Semiconductors GmbH of Regensburg is a wholly owned subsidiary of OSRAM, one of the world's two leading lighting manufacturers in the world. It offers its customers solutions based on semiconductor technology for lighting, sensor and visualization applications. The company employs more than 3,500 people worldwide and operates sites in Regensburg (Germany), San Jose (USA) and Penang (Malaysia). Sales for the fiscal year ending September 2006 totaled more than EUR 500 million. For more information, visit www.OSRAM-os.com.


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