Toshiba Small Signal MOSFETs for High-Speed Switching in Portable Electronics Achieve Low ON-Resistance and Capacitance

Broad S-MOS Family Suitable for Switching Applications or DC-DC Converters in Cellular Phones, Digital Cameras and other Mobile Electronic Devices

IRVINE, Calif., Feb. 22 /PRNewswire/ -- Toshiba America Electronic Components, Inc. (TAEC)* has expanded its power semiconductor lineup with a broad selection of low ON-resistance small signal MOSFETs (S-MOS) suitable for high-speed switching devices or DC-DC converters in portable electronics equipment. The MOSFETs feature among the lowest ON-resistance and lowest capacitance in the industry in 2.8mm x 2.8mm and 1.6mm x 1.6mm packages and are designed to save space while meeting designers' requirements for smaller internal power loss and lower operating voltage in medium output current range applications such as laptop PCs, cellular phones, digital cameras and audio players.

Developed by Toshiba Corp. (Toshiba), the S-MOS family includes 17 six-pin devices (SSM6K- and SSM6J-) designed for 0.5 Amp (A) to 2.5A load switching applications and DC-DC converters operating at 0.5 megahertz(1) (MHz) to 1MHz, and 20 three-pin devices (SSM3K- and SSM3J-) that are suitable for 0.5A to 4.0A switching devices. The six-pin devices, with ON-resistance from 30 milliohms to 400 milliohms, are available in an ultra-small 1.6mm x 1.6mm x 0.55mm package (ES6). The three-pin devices feature ON-resistance from 100 milliohms to 400 milliohms and are offered in a 2.8mm x 2.9mm x 0.7mm package (TSM). N- and P-channel polarities are available in either package, designated by K or J, respectively, in the part number. (See table below.)

To support a wide range of design requirements, the six-pin S-MOS family includes N-channel devices with drain source voltage of 20V or 30V and driving voltage of 1.8V, 2.5V or 4V, and P-channel devices with -12V, -20V or -30V drain source voltage, and driving voltage of 1.5V, 1.8V, 2.5V or 4V. The three-pin S-MOS family includes N-channel devices with drain source voltage of 20V, 30V or 60V, and driving voltage of 1.8V, 2.5V or 4V, and P-channel devices with -12V, -20V or -30V drain source voltage, and driving voltage of 1.8V, 2.5V or 4V.

"Advances in miniaturization of portable equipment are increasingly driving design decisions. At Toshiba, we are working to help our customers realize low capacitance and high speed switching, with lower operating voltages and smaller power losses, which translate into longer battery operation for their designs," said Homayoun Ghani, business development manager, microwave, RF and small-signal products, for TAEC.



    Technical Specifications
    Low ON-Resistance S-MOS (6-pin) in 1.6mm x 1.6mm Package (ES6)

                        Drain   Gate
                       Source  Source  Drain        ON-resistance       Input
                       Voltage Voltage Current  RDS(ON) max(milliohms) Capaci-
    Part                VDSS    VGSS   (max.)  VGS=  VGS=  VGS=  VGS=   tance
    Number     Polarity  (V)     (V)   Io (A)  1.5V  1.8V  2.5V  4.0V CiSS(pF)

    SSM6K203FE   N-ch    20    +/-10    2.9    155   108    78    63     400
    SSM6K202FE   N-ch    30    +/-12    2.3     --   132    95    85     270
    SSM6K204FE   N-ch    20    +/-10    2.0    307   214   164   126     195
    SSM6K208FE   N-ch    30    +/-12    1.8     --   276   185   140     125
    SSM6K25FE    N-ch    20    +/-12    0.5     --   395   190   145     268
    SSM6K24FE    N-ch    30    +/-12    0.5     --    --   180   145     245
    SSM6K22FE    N-ch    20    +/-12    1.4     --    --   230   170     125
    SSM6K209FE   N-ch    30    +/-20    2.4     --    --    --   152     320
    SSM6K30FE    N-ch    20    +/-20    1.2     --    --    --   420      60
    SSM6K31FE    N-ch    20    +/-20    1.2     --    --    --   540      36
    SSM6J53FE    P-ch   -20     +/-8   -1.8    364   204   136    --     568
    SSM6J206FE   P-ch   -20     +/-8   -2.0     --   320   186   130     335
    SSM6J205FE   P-ch   -20     +/-8   -0.8     --   460   306   234     250
    SSM6J26FE    P-ch   -20     +/-8   -0.5     --   980   330   230     250
    SSM6J23FE    P-ch   -12     +/-8   -1.2     --    --   210   160     420
    SSM6J25FE    P-ch   -20    +/-12   -0.5     --    --   430   260     218
    SSM6J207FE   P-ch   -30     +/-8   -1.3     --    --    --   491     137



    Technical Specifications
    Low ON-Resistance S-MOS (3-pin) 2.8mm x 2.9mm Package (TSM)

                        Drain   Gate
                       Source  Source  Drain        ON-resistance       Input
                       Voltage Voltage Current  RDS(ON) max(milliohms) Capaci-
    Part                VDSS    VGSS   (max.)  VGS=  VGS=  VGS=  VGS=   tance
    Number     Polarity  (V)     (V)   Io (A)  1.5V  1.8V  2.5V  4.0V CiSS(pF)

    SSM3K310T   N-ch      20    +/-10    5.0     66    43    32    28       1120
        SSM3K309T      N-ch            20        +/-12        4.7          --        47        35        31        1020
        SSM3K301T      N-ch            20        +/-12        3.5          --      110        74        56          320
        SSM3K302T      N-ch            30        +/-12        3.0          --      131        87        71          270
        SSM3K01T        N-ch            30        +/-10        3.2          --        --      150      120          152
        SSM3K02T        N-ch            30        +/-10        2.5          --        --      250      200          115
        SSM3K311T      N-ch            30        +/-20        4.8          --        --        --        43          910
        SSM3K14T        N-ch            30        +/-20        4.0          --        --        --        67          460
        SSM3K303T      N-ch            30        +/-20        2.9          --        --        --      120          180
        SSM3K308T      N-ch            60        +/-20        2.1          --        --        --      181          248
        SSM3K12T        N-ch            30        +/-20        3.0          --        --        --      175          120
        SSM3J13T        P-ch          -12          +/-8      -3.0          --        --        95        70          890
        SSM3J312T      P-ch          -12          +/-8      -2.7          --      237      142        91          550
        SSM3J304T      P-ch          -20          +/-8      -2.3          --      297      169      127          335
        SSM3J313T      P-ch          -20          +/-8      -1.5          --      614      354      290          174
        SSM3J01T        P-ch          -30        +/-10      -1.7          --        --      600      400          240
        SSM3J02T        P-ch          -30        +/-10      -1.5          --        --      700      500          150
        SSM3J14T        P-ch          -30        +/-20      -2.7          --        --        --      170          413
        SSM3J306T      P-ch          -30        +/-20      -2.4          --        --        --      225          280
        SSM3J305T      P-ch          -30        +/-20      -1.7          --        --        --      477          137



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