Renesas Technology Introduces High-Performance SiGe MMIC: a Dual-Band (2.4GHz/5GHz) Wireless-LAN Power Amplifier

SAN JOSE, Calif.—(BUSINESS WIRE)—October 11, 2006— Renesas Technology America, Inc. today announced the high-performance HA31010, a 2.4GHz/5GHz dual-band SiGe MMIC (monolithic microwave integrated circuit) power amplifier. The device uses less current and circuit board space, so it enables smaller, lower-power dual-band/triple-mode (IEEE-802.11a/b/g) and MIMO (Multiple-Input/Multiple-Output - 802.11n) wireless-LAN terminals.

By incorporating two power amplifiers on a single chip -- one for the 2.4GHz band and another for the 5GHz band -- the HA31010 MMIC achieves a 4 mm x 4 mm mounting area, approximately 40 percent smaller than separate 2.4GHz and 5GHz Renesas SiGe MMICs. The device delivers high gain at the industry's lowest current dissipation level for a SiGe MMIC. Specifically, it achieves a 28dB power gain in the 2.4GHz band while consuming only 130mA, and a 24dB power gain in the 5GHz band while consuming just 160mA.

An on-chip MOSFET-based switching circuit provides on/off control of the two amplifier circuits, simplifying band switching and transmit/receive implementation by eliminating the need for an external switching device. The HA31010 MMIC also incorporates an output power detector circuit. This feature simplifies the design of wireless LAN terminals that actively implement low power consumption. In such designs, the power detector serves as a sensor for the automatic output-power control function that maintains the minimum output power necessary for performing communication.

Renesas uses an ultra-fine SiGe-CMOS process to manufacture the HA31010 chip, which allows a high level of integration. The transistor pattern and circuit-block layout are optimized to reduce parasitic capacitances and inductances that would otherwise degrade high-frequency characteristics. The chip is mounted in a small surface-mount, 24-pin WQFN0404 (Renesas package code) package that is totally lead-free. The package employs silver paste material for optimal die bonding reliability and conductivity, and Sn-Bi (stannum-bismuth) for package electrode plating.

The HA31010 dual-band power amplifier is the second high-performance device Renesas has developed for wireless-LANs. The company entered this market in 2005 with the 5GHz HA31005 SiGe MMIC. Product development in SiGe technology is ongoing to meet the evolving needs of customers in global markets.
Price and Availability

Product Name   Operating Frequencies       Package      Sample Price /
HA31010             2.4GHz/5GHz       24-pin WQFN0404    $2.67/ Now

Reader contact

Readers can find additional product and contact information on the Renesas Technology Web site at

About Renesas Technology Corp.

Renesas Technology Corp. is one of the world's leading semiconductor system solutions providers for mobile, automotive and PC/AV (Audio Visual) markets and the world's No.1 supplier of microcontrollers. It is also a leading provider of LCD Driver ICs, Smart Card microcontrollers, RF-ICs, High Power Amplifiers, Mixed Signal ICs, System-on-Chip (SoC), System-in-Package (SiP) and more. Established in 2003 as a joint venture between Hitachi, Ltd. (TOKYO:6501) (NYSE: HIT) and Mitsubishi Electric Corporation (TOKYO:6503), Renesas Technology achieved consolidated revenue of 906 billion JPY in FY2005 (end of March 2006). Renesas Technology is based in Tokyo, Japan and has a global network of manufacturing, design and sales operations in around 20 countries with about 26,200 employees worldwide. For further information, please visit

Note to Editors: A specification summary is included in this release, and a photo and block diagram of the HA31010 MMIC are available.

Product names, company names, or brands mentioned are the property of their respective owners.
Specifications: Renesas Technology HA31010 Dual-Band Power Amplifier
Item                         Specifications
Product name                 HA31010
Power supply voltage         3.3V +/- 0.3V
2.4GHz    Frequency          2.4GHz to 2.5GHz
operation ------------------------------------------------------------
          Operating current  130mA (typ.) (+19dBm output, 3.3V power
                              supply voltage)
          Gain               28dB (typ.) (f = 2.4GHz)
          Output power       +19dBm (typ.) (IEEE-802.11g, 64QAM/OFDM
                              modulation, EVM = 4%)
5GHz      Frequency          4.9GHz to 5.9GHz
operation ------------------------------------------------------------
          Operating current  160mA (typ.) (+18dBm output, 3.3V power
                              supply voltage)
          Gain               24dB (typ.) (f = 5.2GHz)
          Output power       +18dBm (typ.) (IEEE-802.11a, 64QAM/OFDM
                              modulation, EVM = 4%)
Package                      24-pin WQFN0404(1) (4.0mm x 4.0mm x
                             ((1) Renesas package code)


Renesas Technology America, Inc.
Akiko Ishiyama, 408-382-7407
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