New Devices Range in Power From 40 Volts to 250 Volts, Offering Low On-Resistance, Fast Switching Speeds, and a Small Footprint for Industrial and Mobile Computing Applications
Toshiba's latest 40V and 60V MOSFETs combine recently-introduced low-profile packaging, known as SOP Advance, with the company's ultra-high speed process technology to elevate current rating approximately 200 percent and improve power dissipation by approximately 50 percent, in comparison to standard SOP-8 packaging. Toshiba's SOP Advance packaging is roughly 50 percent thinner than standard SOP-8 and saves substantial space on printed circuit boards. All eight additions to the SOP Advance MOSFET line are N-channel single devices, and feature Lead(Pb)-Free Finish(1) terminals.
"The expansion of the SOP Advance line of MOSFETs demonstrates Toshiba's commitment to product designers who constantly face conflicting demands for smaller packaging with the need for increased power output and efficiency," said Brach Cox, senior business development manager for power devices in TAEC's discrete business unit. "Toshiba's new higher power MOSFET solutions feature thinner packaging and much higher current output, increased switching speeds, and greater power efficiency than ever before. The overall better performance of these devices will significantly assist designers in their efforts to enhance the functionality and power usage of a multitude of different products and applications."
Toshiba is offering two new 40-volt power MOSFETs, designated TPCA8014-H and TPCA8015-H, which carry different specifications for use in diverse applications. The TPCA8014-H model produces a drain current of 30 amps (A) (max.) superior switching speed (fall time) of 4 nanoseconds (ns) (typ.), low drain source on-state resistance (Rds(ON)) of 9.0 milliohms (max.), and a small gate charge (Qsw) of 7.4 nC (typ.). It also has a smaller footprint than previous MOSFETs, due to the use of smaller and thinner packaging. The TPCA8015-H offers an identical size footprint, and equally high switching speed.. However, the device produces a drain current of 35A (max.), extremely low drain source on-state resistance of 6.8 milliohms (max.), and a gate charge of 12.3nC (typ.).
Toshiba's TPCA8016-H is a 60V device producing a drain current of 25A (max.), high switching speed (fall time) of 3ns (typ.), low Rds(ON) of 21 milliohms (max.), and a small gate charge (Qsw) of 6.6nC (typ.). It has a smaller footprint than previous MOSFETs, due to the use of smaller and thinner packaging.
Because of their space savings and increased power efficiency, the 40V and 60V MOSFETS are ideal for high-speed DC-DC converters, notebooks PCs, portable equipment, and other products where printed circuit board space and power consumption levels are important considerations for reducing product size while preserving functionality.
There are also two 100V additions to the SOP Advance MOSFET line, designated TPCA8006-H and TPCA8007-H, respectively. The TPCA8006-H model produces a drain current of 18A (max.), excellent switching speed (fall time) of 2.0ns (typ.), Rds(ON) of 67 milliohms (max.), and a gate charge (Qsw) of 6.9nC (typ.). It also offers a small footprint because of its slimmer packaging. The TPCA8007-H device delivers the same footprint and switching speed as the TPCA8006-H, but carries a Rds(ON) of 47 milliohms (max.) and a gate charge (Qsw) of 8.5nC (typ.). The characteristics of the TPCA8006-H make it suitable for use in high-speed, high-efficiency DC-DC converters, while the TPCA8007-H is appropriate for larger output current DC-DC converters.
For higher speed, higher voltage applications, Toshiba offers three new SOP Advance MOSFETs: a 150V device designated TPCA8009-H, a 200V device designated TPCA8010-H and a 250V device designated TCPA8008-H. Because of their higher speed and higher power, these MOSFETS are ideally suited for high speed, high efficiency DC-DC converters, and motor drives. The 150V TPCA8009- H model produces a drain current of 7A (max.), a fast switching speed (fall time) of 13ns, extremely low Rds(ON) of 350 milliohms (max.), and a small gate charge (Qsw) of 3.7nC (typ.). The TPCA8010-H produces a drain current of 5.5A, a fast switching speed (fall time) of 13ns (typ.), Rds(ON) of 450 milliohms (max), and a small gate charge (Qsw) of 3.7nC (typ.). The highest power device in the family, the 250V TPCA8008-H, features a drain current of 4A (max.), switching speed of 13ns (typ.), Rds(ON) of 580 milliohms (max.), and a gate charge (Qsw) of 3.7nC (typ.).
Technical Specifications Product Circuit Process Configuration Technology TPCA8014-H N-ch Single Ultra High Speed U-MOS III TPCA8015-H N-ch Single TPCA8016-H N-ch Single TPCA8006-H N-ch Single pi-MOS VII TPCA8007-H N-ch Single TPCA8009-H N-ch Single pi-MOS V TPCA8010-H N-ch Single MACH II TPCA8008-H N-ch Single Product Maximum Ratings Rds(on)(MAX.) Qsw (nC) Typ. (milliohms) Vdss(V) Id(A) @Vgs=10V TPCA8014-H 40 30 9.0 7.4@VDD = 32V, VGS=10V TPCA8015-H 40 35 6.8 12.3@VDD = 32V, VGS=10V TPCA8016-H 60 25 21 6.6@VDD = 48V, VGS=10V TPCA8006-H 100 18 67 6.9@VDD = 80V, VGS=10V TPCA8007-H 100 20 47 8.5@VDD = 80V, VGS=10V TPCA8009-H 150 7 350 3.7@VDD = 120V, VGS=10V TPCA8010-H 200 5.5 450 3.7@VDD = 160V, VGS=10V TPCA8008-H 250 4 580 3.7@VDD = 200V, VGS=10V Pricing and Availability
Samples of Toshiba's eight new SOP Advance MOSFETs are available now, with the 40V TPCA8014-H and TPCA8015-H models priced at $0.50 and $0.60 each, respectively. The 60V TCPA8016 -H is priced at $0.50, each. The 100V TPCA8006-H and TPCA8007-H devices are priced at $0.60 and $0.70 each, respectively. The 150V TPCA8009-H is priced at $0.45 and the 200V TPCA8010-H and 250V TCPA8008-H are priced at $0.45 and $0.60 each respectively. Production quantities are scheduled for availability in January 2005.
Toshiba's Discrete Products
Since 1986, Toshiba has ranked as the top discrete supplier on a worldwide basis. According to its most recent report, Gartner Dataquest (San Jose, Calif.) ranks Toshiba as the top supplier according to revenue from worldwide shipments of total discrete products for 2003. More specifically, Toshiba leads in worldwide market share in a number of discrete product categories, including power transistors, LMOS logic, CMOS logic, visible laser diodes and photocouplers. With the company's understanding of market requirements and combining target applications with the right products, Toshiba continues to deliver solutions that lead the industry in innovation, quality and value. The company's discrete devices are designed to meet the growing demand for high performance and lower voltages in today's wireless telecom and consumer electronics applications while emphasizing its strength in the automotive and industrial markets.
Combining quality and flexibility with design engineering expertise, TAEC brings a breadth of advanced, next-generation technologies to its customers. This broad offering includes semiconductors, flash memory-based storage solutions, and displays for the computing, wireless, networking, automotive and digital consumer markets.
TAEC is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba, one of the five largest semiconductor manufacturers worldwide in terms of global sales for the year 2003 according to Gartner/Dataquest's Worldwide Semiconductor Market Share Ranking. Toshiba is a world leader in high-technology products with more than 300 major subsidiaries and affiliates worldwide. For additional company and product information, please visit TAEC's Web site at http://chips.toshiba.com/. For technical inquiries, please e-mail Email Contact.
Information in this press release, including product pricing and specifications, content of services and contact information, is current on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba's "Handling Guide for Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This information is available at http://chips.toshiba.com/, or from your TAEC representative.
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(1) Lead(Pb)-Free Finish
Toshiba defines "Lead(Pb)-Free" in accordance with current industry standards as not to exceed 0.1 percent lead(Pb) by weight. This does not mean that Toshiba products that are labeled "Lead(Pb)-Free" are entirely free of lead(Pb). During a transitional phase, in addition to Lead(Pb)-Free products (that do not exceed 0.1. percent lead(Pb) by weight), TAEC will also offer products that have Lead(Pb)-Free terminals, which will be referred to as "Lead(Pb)-Free Finish". The Lead(Pb)-Free Finish products may contain greater than 0.1 percent lead(Pb) by weight in portions of the product other than the terminals, for example, in internal solder used to connect the semiconductor silicon to the package.
CONTACT: Jan Johnson of MultiPath Communications International,
+1-714-633-4008, Email Contact, for Toshiba; or Lisa Nemec of Toshiba
America Electronic Components, Inc., +1-949-623-3099,
Web site: http://chips.toshiba.com/