Toshiba Launches the Industry's Leading-class Low On-resistance N-Channel MOSFETs for Load Switches in Mobile Devices

Heat dissipation reduced by 40% compared to Toshiba existing products

TOKYO — (BUSINESS WIRE) — September 26, 2016Toshiba Corporation’s (TOKYO:6502) Storage & Electronic Devices Solutions Company today announced the launch of N-channel MOSFETs for load switches in mobile devices, including smartphones and tablets, that secure the industry’s leading-class[1] low on-resistance. Shipments of the new products start from today.

This Smart News Release features multimedia. View the full release here: http://www.businesswire.com/news/home/20160926005575/en/

Toshiba: Low On-resistance N-Channel MOSFETs for Load Switches in Mobile Devices (Photo: Business Wi ...

Toshiba: Low On-resistance N-Channel MOSFETs for Load Switches in Mobile Devices (Photo: Business Wire)

The new product line-up consists of the 30V “SSM6K513NU” and the 40V “SSM6K514NU”. By utilizing Toshiba’s latest “U-MOS IX-H series” trench process, the new MOSFETs achieve the industry’s leading-class low on-resistance: 6.5mOhm for “SSM6K513NU” and 8.9mOhm for SSM6K514NU”. This allows the new products to reduce heat dissipation resulting from turn-on loss by approximately 40% against Toshiba existing products. [2]

The MOSFETs are suitable for use in electric power switching applications of over 10W, including small-size mobile devices that meet the USB Type-CTM and USB Power Delivery (PD) standards, and contribute to high system efficiency and low power consumption.

 

Main Specifications

Part Number

 

Absolute Maximum Ratings

 

RDS(ON) typ. (mOhm)

 

Ciss typ.

(pF)

 

Package

VDSS
(V)
  VGSS
(V)
  ID
(A)
VGS=4.5V   VGS=10V
SSM6K513NU 30 ±20 15 8 6.5 1130 SOT-1220
SSM6K514NU   40   ±20   12   11.2   8.9   1110  
 

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