Glasgow, Scotland, September 2015– Gold Standard Simulations Ltd. (GSS) Peking University is the first Chinese customer of GSS. It has purchased the GSS DTCO tool flow for the study of future semiconductor technologies. Collaborations between Peking University, GSS and The University of Glasgowhave resulted in an abstract accepted for IEDM entitled ‘Predictive Compact Modeling of Random Variations in FinFET Technology for 16/14nm Node and Beyond’, and a joint paper in IEEE TED entitled ‘Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of N-type Nanowire Transistors'.
According to the Head of Institute of Microelectronics of PKU, Professor Huang, "We are very happy to collaborate with GSS and The University of Glasgow. GSS offers outstanding TCAD solutions for the variability study of advanced semiconductor technology, which is very helpful to our research here."
According to Professor Liu of Institute of Microelectronics of PKU, “ I’m very impressed by the work in The University of Glasgow and GSS. It’s my pleasure to collaborate with the teams in Glasgow. And I hope we can contribute more achievement based on the solid experience and powerful tool of GSS. ”
According to the Head of the Glasgow School of Engineering Professor John Marsh, “Peking University and The University of Glasgow are world leading institutions and GSS is a global leader in tools for device modelling. I am delighted the three partners are collaborating on a programme of such major importance in China.”
According to the CEO of GSS and Head of the Glasgow Device Modelling Group, Professor Asenov: “It is a privilege to work with Peking University which is the top Chinese university. The research in the Institute of Microelectronics of Peking University is world class. For GSS the collaboration with Peking University opens the door to the ambitious Chinese microelectronics program”
About Gold Standard Simulations
Gold Standard Simulations Ltd is the world leader in predictive simulation nano-CMOS devices including statistical variability and reliability. The company’s simulation tool chain enables the physical simulation of performance and statistical variability and reliability in contemporary and future CMOS technologies, statistical compact model extraction and statistical circuit simulation using “push button” cluster-based technology. For more information visit http:// www.GoldStandardSimulations.com.
Peking University is a comprehensive and national key university in China. Peking University is proud of its outstanding faculty, including 53 members of the Chinese Academy of Sciences (CAS), and 7 members of the Chinese Academy of Engineering (CAE). The university has effectively combined research on important scientific subjects with the training of personnel with a high level of specialized knowledge and professional skill as demanded by the country's socialist modernization. It strives not only for improvements in teaching and research work, but also for the promotion of interaction and mutual promotion among various disciplines. Thus Peking University has become a center for teaching and research and a university of a new type, embracing diverse branches of learning such as basic and applied sciences, social sciences and the humanities, and sciences of medicine, management, and education.
About The University of Glasgow
The University of Glasgow has been inspiring people to change the world for over 550 years and is a member of the prestigious Russell Group of leading UK research universities. As a world top 100 university with annual research income of more than £181m and overall student satisfaction rate of 91%, The University of Glasgow is committed to delivering world class research at the same time as the highest standards of teaching and education.
IEDM 2015:Predictive Compact Modeling of Random Variations in FinFET Technology for 16/14nm Node and Beyond
Abstract: For the first time, predictive compact models for gate edge roughness (GER) and Fin edge roughness (FER) of FinFETs are proposed, and integrated into industry standard BSIM-CMG model. Excellent accuracy and predictivity is verified through atomistic TCAD simulations, and the correlation between different device figure of merits (FOMs) is well captured. The impacts of GER and FER on circuits are efficiently predicted for 16nm node and beyond with HSPICE, providing helpful guildlines for variation-aware design and technology process development. In addition, a non-monotonous trend of FER induced variation on Fin width is observed and explained with the newly found correlation between short channel effect (SCE) and random variation in FinFETs. Furthermore, a new Vth normalization approach is proposed to exclude SCE impacts and provide a more essential way for technology evaluation.
IEEE Transaction on Electron Devices: Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of N-type Nanowire Transistors.
Abstract: In this paper we have studied the impact of quantum confinement on the performance of n-type silicon nanowire transistors (NWT) for application in advanced CMOS technologies. The 3D drift-diffusion simulations based on the density gradient approach that has been calibrated with respect to the solution of the Schrödinger equation in 2D cross-sections along the direction of the transport arepresented. The simulated NWTs have cross-sections and dimensional characteristics representative of the transistors expected at 7nm CMOS technology. Different gate lengths, cross-section shapes, spacer thicknesses and doping steepness were considered. We have studied the impact of the quantum corrections on the gate capacitance, the mobile charge in the channel, the drain-induced barrier lowering and the sub-threshold slope. The mobile charge to gate capacitance ratio, which is an indicator of the intrinsic speed of the NWTs is also investigated. We have also estimated the optimal gate length for different NWT design conditions.
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