SUNNYVALE, Calif.—(BUSINESS WIRE)—October 26, 2006— MoSys, Inc. (NASDAQ: MOSY), the industry's leading provider of high-density system-on-chip (SoC) embedded memory solutions, announced that it has settled all outstanding litigation with UniRAM Technology Inc. related to the trade secret misappropriation and patent infringement suit filed in 2004 by UniRAM.
Under the settlement agreement, the companies agreed to dismiss
all outstanding claims and counterclaims with prejudice, MoSys will
pay UniRAM $2.4 million, and receive a complete release of all claims
as well as a future fully paid license for itself and all of its
MoSys recorded the settlement costs incurred in connection with
the foregoing settlement during the three months ending September 30,
ABOUT MOSYS, INC.
Founded in 1991, MoSys (NASDAQ:
MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys'
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys' licensees have shipped more than
100 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 755 N. Mathilda
Avenue, Sunnyvale, California 94085. More information is available on
MoSys' website at http://www.mosys.com.