Toshiba Launches Highest Density(1) Embedded NAND Flash Memory Devices

32nm e-MMC v4.4 Compliant Embedded Memories Combine Up To 64GB NAND and Controller in a Single Package

IRVINE, Calif., and TOKYO, Dec. 14 /PRNewswire/ -- Toshiba Corp. (Toshiba) and Toshiba America Electronic Components, Inc. (TAEC)*, its subsidiary in the Americas, today announced the launch of a 64 gigabyte(2) (GB) embedded NAND flash memory module, the highest capacity yet achieved in the industry. The chip is the flagship device in a line-up of six new embedded NAND flash memory modules that offer full compliance with the latest e-MMC(TM)(3) standard, and that are designed for application in a wide range of digital consumer products, including Smartphones, mobile phones, netbooks and digital video cameras. Samples of the 64GB module are available from today, and mass production will start in the first quarter of 2010.

The new 64GB embedded device combines sixteen pieces of 32Gbit (equal to 4GB) NAND chips fabricated with Toshiba's cutting-edge 32nm process technology, and also integrates a dedicated controller. Toshiba is the first company to succeed in combining 16 pieces of 32Gbit NAND chips, and applied advanced chip thinning and layering technologies to realize individual chips that are only 30 micrometers thick. Full compliance with the JEDEC/MMCA Version 4.4(V4.4) standard for embedded MultiMediaCards supports standard interfacing and simplifies embedding in products, reducing development burdens on product manufacturers. (Please visit http://www.toshiba.com/taec/news/media_resources/news_mr_gallery.jsp for a photo of the seventeen layer stack.)

Toshiba offers a comprehensive line-up of single-package embedded NAND Flash memories in densities ranging from 2GB to 64GB. All integrate a controller to manage basic control functions for NAND applications, and are compatible with the latest e-MMC(TM) standard and its new features, including defining multiple storage areas and enhanced security features.

Demand continues to grow for embedded memories with a controller function that minimizes development requirements and eases integration into system designs. Toshiba has established itself as an innovator in this key area. The company was first to announce a 32GB e-MMC(TM) compliant device, and is now reinforcing its leadership by being first to market with a 64GB generation module.

"The e-MMC(TM) interface has become the most widely embraced embedded NAND solution with a built-in controller to simplify integration into system designs. With the addition of higher density, Ver 4.4 e-MMC(TM) compliant product offered as single package solutions or as part of a multi-chip module combined with DRAM, Toshiba can help designers reduce memory subsystem space requirements," said Scott Beekman, business development manager, mobile communications memory for TAEC.

Toshiba e-MMC(TM) Ver 4.4 devices are available in a standard configuration with the NAND flash and built-in controller or in a multi-chip module (MCP) with DRAM or other memory to reduce the memory subsystem requirement to one chip. Toshiba MCPs offer multiple memory technologies such as NAND Flash, NOR Flash, Pseudo SRAM (PSRAM), and low-power SDRAM in a single package to simplify layout and save valuable board space in increasingly complex, feature-rich cellular phones.

New Product Line-up


                                          Sample      Mass       Production
    Product Number   Cap.   Package      Shipment   Production      Scale

    THGBM2G9DGFBAI2 64GB  169Ball FBGA   Dec. 2009  1Q, 2010
                          14x18x1.4mm               (Jan.-Mar.)
                                                                 3 million/
    THGBM2G8D8FBAIB 32GB  169Ball FBGA   Feb. 2010  2Q, 2010        month
                          12x16x1.4mm               (Apr.-Jun.)    (Total)

    THGBM2G7D4FBAI9 16GB  169Ball FBGA   Jan. 2010  1Q, 2010
                          12x16x1.2mm               (Jan.-Mar.)

    THGBM2G6D2FBAI9  8GB  169Ball FBGA   Mar. 2010  2Q, 2010
                          12x16x1.2mm               (Apr.-Jun.)

    THGBM2G5D1FBAI9  4GB  169Ball FBGA   Apr. 2010  2Q, 2010
                          12x16x1.2mm               (Apr.-Jun.)

    THGBM2G4D1FBAI8  2GB  153Ball FBGA   2Q, 2010   3Q, 2010
                          11.5x13x1.2mm (Apr.-Jun.) (Jul.-Sep.)

Key Features

    1. The JEDEC/MMCA V4.4 compliant interface handles essential functions,
       including writing block management, error correction and driver software.
       It simplifies system development, allowing manufacturers to minimize
       development costs and speed up time to market for new and upgraded
       products.
    2. A wide product line-up supports capacities from 2 to 64GB. The
       high-capacity 64GB embedded devices can record up to 1,070 hours of music
       at a1 28Kbps bit rate, 8.3 hours of full spec high definition video(4)
       and 19.2 hours of standard definition video.
    3. The 64GB device stacks sixteen 32Gbit chips fabricated with leading-edge
       32nm process technology. Application of advanced chip thinning, layering
       and wire bonding technologies allowed Toshiba to achieve individual chips
       only 30 micrometers thick, and to layer and bond them in a small package.
       The result is the highest density embedded NAND flash memory module in
       the industry.
    4. The new chips support the advanced partitioning and security of e-MMC(TM)
       V4.4. Multiple storage areas can be configured, including several
       enhanced memory areas for system files or code, and a multi-level cell
       (MLC) area for data storage. The new 64GB product is sealed in a small
       FBGA package, which is 14mm x 18mm x 1.4mm and has a signal layout
       compliant with JEDEC/MMCA V4.4.

Specifications

e-MMC


    Interface          JEDEC/MMCA V4.4 standard HS-MMC interface

    Power Supply       2.7V to 3.6V(memory core);
    Voltage            1.65V to 1.95V / 2.7V to 3.6V (interface)

    Bus width          x1, x4, x8

        Write  Speed(5)          Target  20MB  per  sec.  (Sequential/Interleave  Mode)
                                              Target  9MB  per  sec.  (Sequential/No  Interleave  Mode)*

        Read  Speed(5)            Target  37MB  per  sec.  (Sequential  Mode/Interleave
                                              Mode)
                                              Target  22MB  per  sec.  (Sequential/No  Interleave  Mode)*

        Temperature  range    -25degrees  to  +85degees  Celsius

        Package                        153Ball  FBGA  (+16  support  balls)

        *Available  only  for  THGBM2G5D1FBAI9  and  THGBM2G4D1FBAI8.
 


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