Hybrid high-k/metal gate integration solution combines strengths of both gate- first and gate-last techniques
"The spirit of innovation is always a key factor when developing advanced technologies," said Mr. S.C. Chien, vice president of Advanced Technology Development at UMC. "This published work demonstrates UMC's ability to conceive and develop alternative solution paths, leveraging in-depth learning of existing HK/MG process options to respond to today's rising demand for cutting-edge products and applications."
There are two different HK/MG integration schemes co-existing in the industry, gate-first and gate-last. For gate-first, the HK/MG is inserted before the gate is patterned (formed). For 'gate-last' or 'replacement metal gate', MG is 'filled in' after a polysilicon dummy gate is formed and then removed. In addition to the newly proposed hybrid approach, UMC has been developing gate-last HK/MG technology since gate-last has been proven in high volume within the industry for CPU manufacturing. The company's advanced technology development efforts are taking place at UMC's 300mm Fab and R&D complex in Tainan, Taiwan.
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UMC (NYSE: UMC) (TSE: 2303) is a leading global semiconductor foundry that provides advanced technology and manufacturing services for applications spanning every major sector of the IC industry. UMC's customer-driven foundry solutions allow chip designers to leverage the strength of the company's leading-edge processes, which include production proven 65nm, 45/40nm, mixed signal/RFCMOS, and a wide range of specialty technologies. Production is supported through 10 wafer manufacturing facilities that include two advanced 300mm fabs; Fab 12A in Taiwan and Singapore-based Fab 12i are both in volume production for a variety of customer products. The company employs approximately 13,000 people worldwide and has offices in Taiwan, Japan, Singapore, Europe, and the United States. UMC can be found on the web at http://www.umc.com .
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