"4DS memory has the potential to replace all existing semiconductor memories and can be manufactured in a fraction of the process mask steps above standard CMOS as comparable memory technologies such as FLASH and DRAM," said Kurt Pfluger, CEO of 4DS, Inc. "The 4DS method uses existing semiconductor processes and requires fewer changes to the semiconductor manufacturing equipment, enabling simple manufacturing through a technology that can be scaled significantly farther than NAND or NOR FLASH."
"Partnering with an industry leader will enable a leapfrog opportunity to displace the $60B semiconductor memory market and take in embedded memory applications as well," said Pfluger.
4DS, Inc.'s RRAM is a high-capacity non-volatile memory with fast switching speeds measured below 5ns, and with an endurance of 1 billion write/read cycles. RRAM has the potential to become the front runner among memory technologies. RRAM exhibits lower programming currents than PRAM or MRAM without sacrificing programming performance, retention or endurance. Compared to PRAM, RRAM operates at a faster timescale, while compared to MRAM, it has a simpler, smaller cell structure (MRAM = 16F squared 4DS = 4F squared) Compared to FLASH Memory and Racetrack Memory, RRAM requires lower voltages and lower currents and enabling the use in low power applications.
About 4DS, Inc.
4DS, Inc. is a non-volatile semiconductor memory company located in Silicon Valley. 4DS, Inc. is producing the next generation of memory products offering high capacity, high performance and low cost. 4DS has developed a new, low-cost process for mass-production. 4DS, Inc.'s revolutionary RRAM is produced using a proprietary process which easily fit into existing semiconductor fabs.
4DS, Inc. is a privately held US corporation located in Fremont, California and is a subsidiary of 4D-S Pty Ltd, an Australian Corporation. For more information, please visit www.4-D-S.com.
Contact: Kurt Pfluger 4DS, Inc. 408/219/6490 Email Contact