Renesas Technology Introduces Dual-type Power MOSFET for More Efficient DC/DC Converters for Laptop PCs and Communication Devices

About Renesas Technology Corp.

Renesas Technology Corp. is one of the world's leading semiconductor system solutions providers for mobile, automotive and PC/AV (Audio Visual) markets and the world's No.1 supplier of microcontrollers. It is also a leading provider of LCD Driver ICs, Smart Card microcontrollers, RF-ICs, High Power Amplifiers, Mixed Signal ICs, System-on-Chip (SoC) devices, System-in-Package (SiP) products and more. Established in 2003 as a joint venture between Hitachi, Ltd. (TOKYO:6501) (NYSE:HIT) and Mitsubishi Electric Corporation (TOKYO:6503), Renesas Technology achieved consolidated revenue of 951 billion JPY in FY2007 (end of March 2008). Renesas Technology is based in Tokyo, Japan and has a global network of manufacturing, design and sales operations in around 20 countries with about 26,800 employees worldwide. For further information, please visit http://www.renesas.com

Note to Editors: A specification summary of the new power MOSFET is included in this release and a device photo is available.

Notes:

  1.   Or 5.1 x 6.1 mm and 0.8 mm thick (max.)
 
2. High-side and low-side transistors: These circuit elements are used as non-isolated DC-DC converter switches, enabling voltage conversion to be performed by means of alternate on/off switching between the high and low sides of a transformer. For the high-side on-period, a short pulse of approximately 10 percent of one cycle is controlled. The remaining 90 percent is the on-period of the low-side element. Thus, a transistor whose characteristics emphasize switching speed is selected for the high-side element, while a different type of transistor whose characteristics emphasize low on-resistance is selected for the low-side element.
 
3. WPAK high-thermal-radiation package: In a power MOSFET, heat is generated due to on-resistance, switching, and other loss factors. The amount of current that can be controlled is determined by how efficiently this heat can be released from the package. The structure of a WPAK package allows heat to be conducted efficiently from a heat-dissipating die pad on the rear surface of the package to the board on which the device is mounted. This enables a larger current to be controlled.
 
4. On-resistance: The operational resistance of a power MOSFET. On-resistance is the most important parameter affecting power-MOSFET performance. Performance increases as on-resistance decreases.

« Previous Page 1 | 2 | 3 | 4  Next Page »



Review Article Be the first to review this article
CST: Webinar November 9, 2017

Aldec

Featured Video
Editorial
Peggy AycinenaWhat Would Joe Do?
by Peggy Aycinena
DVCon Europe 2017: Munich and So much more
More Editorial  
Jobs
Senior R&D Engineer...Timing Closure Specialist for EDA Careers at San Jose or Anywhere, CA
Senior Front-End RTL Design AE for EDA Careers at San Jose, CA
Technical Support Engineer EU/Germany/UK for EDA Careers at N/A, United Kingdom
Upcoming Events
25th IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC 2017) at Yas Viceroy Abu Dhabi Yas Marina Circuit, Yas Island Abu Dhabi United Arab Emirates - Oct 23 - 25, 2017
ARM TechCon 2017 at Santa Clara Convention Center Santa Clara CA - Oct 24 - 26, 2017
MIPI DevCon Bangalore 2017 at The Leela Palace Bengaluru India - Oct 27, 2017
MIPI DevCon Hsinchu City 2017 at Sheraton Hsinchu Hotel Taiwan - Oct 31, 2017
CST: Webinar series



Internet Business Systems © 2017 Internet Business Systems, Inc.
25 North 14th Steet, Suite 710, San Jose, CA 95112
+1 (408) 882-6554 — Contact Us, or visit our other sites:
AECCafe - Architectural Design and Engineering TechJobsCafe - Technical Jobs and Resumes GISCafe - Geographical Information Services  MCADCafe - Mechanical Design and Engineering ShareCG - Share Computer Graphic (CG) Animation, 3D Art and 3D Models
  Privacy PolicyAdvertise