Renesas Technology Corp. is one of the world's leading semiconductor system solutions providers for mobile, automotive and PC/AV (Audio Visual) markets and the world's No.1 supplier of microcontrollers. It is also a leading provider of LCD Driver ICs, Smart Card microcontrollers, RF-ICs, High Power Amplifiers, Mixed Signal ICs, System-on-Chip (SoC) devices, System-in-Package (SiP) products and more. Established in 2003 as a joint venture between Hitachi, Ltd. (TOKYO:6501) (NYSE:HIT) and Mitsubishi Electric Corporation (TOKYO:6503), Renesas Technology achieved consolidated revenue of 951 billion JPY in FY2007 (end of March 2008). Renesas Technology is based in Tokyo, Japan and has a global network of manufacturing, design and sales operations in around 20 countries with about 26,800 employees worldwide. For further information, please visit http://www.renesas.com
Note to Editors: A specification summary of the new power MOSFET is included in this release and a device photo is available.
|1.||Or 5.1 x 6.1 mm and 0.8 mm thick (max.)|
|2.||High-side and low-side transistors: These circuit elements are used as non-isolated DC-DC converter switches, enabling voltage conversion to be performed by means of alternate on/off switching between the high and low sides of a transformer. For the high-side on-period, a short pulse of approximately 10 percent of one cycle is controlled. The remaining 90 percent is the on-period of the low-side element. Thus, a transistor whose characteristics emphasize switching speed is selected for the high-side element, while a different type of transistor whose characteristics emphasize low on-resistance is selected for the low-side element.|
|3.||WPAK high-thermal-radiation package: In a power MOSFET, heat is generated due to on-resistance, switching, and other loss factors. The amount of current that can be controlled is determined by how efficiently this heat can be released from the package. The structure of a WPAK package allows heat to be conducted efficiently from a heat-dissipating die pad on the rear surface of the package to the board on which the device is mounted. This enables a larger current to be controlled.|
|4.||On-resistance: The operational resistance of a power MOSFET. On-resistance is the most important parameter affecting power-MOSFET performance. Performance increases as on-resistance decreases.|