Varian Semiconductor Adds Dr. Gary Rosen as Vice President of Engineering

GLOUCESTER, MA -- (MARKET WIRE) -- Jun 27, 2005 -- Varian Semiconductor Equipment Associates, Inc. (NASDAQ: VSEA) announced today the addition of Dr. Gary Rosen to the position of vice president of engineering. He will report to Gary Dickerson, chief executive officer. Dr. Rosen is being hired to succeed Al Sheng, Ph.D., the Company's current vice president of engineering, who will retire in 2006.

Rosen joins Varian Semiconductor from his previous position as Deputy General Manager of the Common Platform Division at Applied Materials where he was responsible for common platform products across all divisions. Previously, he was the High Current Product Line Manager and Implanter Development Manager at Axcelis Technologies. He holds a Ph.D. in Engineering Science and M.S. and B.S. degrees in Mechanical Engineering from Clarkson University.

"Gary has a great track record for developing and introducing successful products", said Gary Dickerson, chief executive officer. "His ability in systems engineering, management of common platform product development, and reliability engineering will help us drive further market share gains with our single wafer VIISta family of products. I also want to thank Al Sheng for his contribution to our success. Under his leadership we have accelerated the rate of new product introductions and have extended our technology leadership. Bringing Gary in now will enable a seamless transition in engineering management."

"I am excited to join Varian Semiconductor at this critical time in the ion implant business," said Gary Rosen. "Semiconductor manufacturers are increasingly switching from batch to single wafer processing in the high current market for improved yield and throughput. Varian Semiconductor is the clear leader in ion implant technology and I am confident that we can continue to leverage this strength to expand our business worldwide."

About Varian Semiconductor

Varian Semiconductor Equipment Associates, Inc. is a leading producer of ion implantation equipment used in the manufacture of semiconductors. The Company is headquartered in Gloucester, Massachusetts, and operates worldwide. Varian Semiconductor maintains a web site at The information contained in the Company's web site is not incorporated by reference into this release, and the web site address is included in this release as an inactive textual reference only.

Note: This release contains forward-looking statements for purposes of the safe harbor provisions under The Private Securities Litigation Reform Act of 1995. For this purpose, the statements concerning the Company's performance, market share and technology leadership, technological capabilities and benefits are forward-looking statements and any statements using the terms "believes," "anticipates," "expects," "plans," or similar expressions are forward-looking statements. There are a number of important risks and factors that could cause actual events to differ materially from those suggested or indicated by such forward-looking statements. These include, among others, volatility in the semiconductor equipment industry; economic conditions in general and as they affect the Company's customers; significant fluctuations in the Company's quarterly operating results; the impact of rapid technological change; the Company's dependence on the development and introduction of new products; the Company's concentration on ion implantation systems and related products; concentration in the Company's customer base and lengthy sales cycles; the highly competitive market in which the Company competes; risks of international sales; foreign currency risks; and general economic conditions; and other factors identified in the Company's Annual Report on Form 10-K, and the most recent Quarterly Reports on Form 10-Q filed with the Securities and Exchange Commission. The Company cannot guarantee any future results, levels of activity, performance or achievement. The Company undertakes no obligation to update any of the forward-looking statements after the date of this press release.

Susan Torbitt
Public Relations and Communications

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Mary Wright
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