Infineon Technologies Launches CoolMOS CS Server Series High-Voltage Power Transistors for High-End Power Supplies

New MOSFETs Offer World's Lowest On-State Resistance and Fastest Switching Speed

AUSTIN, Texas & MUNICH, Germany—(BUSINESS WIRE)—March 8, 2005— Continuing its tradition of pioneering innovations for the semiconductor industry, Infineon Technologies (NYSE: IFX) (FWB: IFX) today launched its CoolMOS(TM) CS Server series of high-performance power transistors, designed specifically for power supplies used in computer servers and other high-power-density applications such as telecom equipment and flat panel displays. Heat generated by the power supply can be a major problem and leads to costly thermal management efforts. Infineon's new family of power transistors will enable power supply designs that are smaller, more energy efficient and generate significantly less heat than alternative power transistors.

The CoolMOS CS Server series is being introduced at the 2005 Applied Power Electronics Conference, taking place this week.

Based on a technical breakthrough that allows them to overcome the so-called silicon limit for performance, the new CoolMOS CS Server metal-oxide semiconductor field-effect transistors (MOSFETs) have the world's lowest on-state resistance of 99 milliohms in a standard TO 220 package, or 45 milliohms in a standard TO 247 package, coupled with the industry's fastest switching speeds of 150 V (volts) per nanosecond and a 600 V voltage blocking capability.

"Our latest generation of high-voltage power MOSFETs will make AC/DC power supplies more efficient, more compact and easier to use worldwide," said Gerhard Wolf, director of marketing of Infineon's power management division. "With today's hunger for power, intelligent and efficient use of electrical power is a must."

Infineon is demonstrating a 1000 W (watt) reference design for a server power supply, with one 99 milliohms CoolMOS CS power transistor. It produces 1.5 percent higher efficiency compared to a similar power supply made using two commonly available, standard 250 milliohms MOSFETs, placed in parallel. This increased efficiency results in more than 10 percent system cost reduction per watt. It also enables the designer to realize a smaller form factor for the system. In addition, Infineon is also demonstrating a 1500 W power factor correction design, which achieves 99 percent efficiency with a 99 milliohms CoolMOS CS power transistor, an industry record.

The Silicon Limit

The ideal high-voltage switch (MOSFET) for use in a power supply should have no resistance in its "on state", when it conducts electricity. Conversely, in its "off state", it should block an infinitely high voltage and prevent any electricity from flowing through it. In reality, this proves to be impossible. Doubling the voltage blocking capability typically leads to an increase in the on-state resistance by a factor of five -- a physical law often referred to as the silicon limit for performance.

Infineon's researchers overcame this fundamental barrier by clever design of their high-voltage CoolMOS switch family. "To come as close as possible to zero resistance we add more and more charge in the device for current conduction," said Dr. Gerald Deboy, head of technical marketing for high-voltage discrete devices at Infineon Technologies, who led the development team. "This charge is then counterbalanced by exactly the same amount of charge of the opposite type. The two charges are separated locally in the device by a very refined technology. In the end, we get a pattern with very fine pitch. The finer the pitch can be made, the lower the on-state resistance will be. With every CoolMOS generation, we increase the fineness of the pitch, moving ever closer to the zero resistance point without losing voltage blocking capability."

Additional Technical Details about the CoolMOS CS Server Series

The CoolMOS CS Server series offers the lowest on-state resistance in every package at 600 V voltage blocking capability. This allows designers to lower the conduction losses of power supply designs, which increases efficiency. Higher efficiency allows the designer to have a smaller form factor for the system, or to increase the output power of the system without changing anything in the thermal management, directly driving down system costs per watt.

The benefit of low conduction losses comes with very fast switching speed, which in turn will largely reduce switching losses of the system. This fast switching speed can be used to return from complex resonant power supply architectures to simple, easy-to-design hard-switching AC/DC supply topologies. Additionally, the new CoolMOS CS Server series requires very low gate-drive power, allowing the use of low power standard gate drivers and ICs. The overall result will be less-expensive, more compact systems, due to the reduction in size and cost of passive components.

Availability, Packaging and Pricing

The first products in the CoolMOS CS Server series are: 45 milliohms in a TO247 package and 99 milliohms in a TO220 package as well as TO247 package. Samples will be available next month, with volume production expected to start in May 2005. The unit price for 99 milliohms device in a TO220 package will be less than 4.00 Euro, for orders of more than 10,000 pieces.

Further information on Infineon's power semiconductors is available at

About Infineon

Infineon Technologies AG, Munich, Germany, offers semiconductor and system solutions for automotive, industrial and multimarket sectors, for applications in communication, as well as memory products. With a global presence, Infineon operates through its subsidiaries in the US from San Jose, CA, in the Asia-Pacific region from Singapore and in Japan from Tokyo. In fiscal year 2004 (ending September), the company achieved sales of Euro 7.19 billion with about 35,600 employees worldwide. Infineon is listed on the DAX index of the Frankfurt Stock Exchange and on the New York Stock Exchange (ticker symbol:IFX). Further information is available at

This news release is available online at

Infineon Technologies
Monika Sonntag, +49 89 234 24497 (Worldwide Headquarters)

Email Contact
Saswato Das, 212-529-1789 (U.S.A.)

Email Contact
Kaye Lim, +65 6840 0689 (Asia)

Email Contact
Hirotaka Shiroguchi, +81 3 5449 6795 (Japan)

Email Contact
Investor Relations:
+49 89 234 26655 (EU/APAC)
408-501-6800 (USA/CAN)

Email Contact


Review Article Be the first to review this article


Featured Video
Peggy AycinenaWhat Would Joe Do?
by Peggy Aycinena
Acquiring Mentor: Four Good Ideas, One Great
More Editorial  
SENIOR ASIC Design Engineer for TiBit Communications at Petaluma, CA
Sr. staff ASIC Design Engineer -2433 for Microchip at San Jose, CA
Manager, Field Applications Engineering for Real Intent at Sunnyvale, CA
Upcoming Events
DeviceWerx - 2016 at Green Valley Ranch Casino & Resort Las Vegas NV - Nov 3 - 4, 2016
2016 International Conference On Computer Aided Design at Doubletree Hotel Austin TX - Nov 7 - 10, 2016
ICCAD 2016, Nov 7-10, 2016 at Doubletree Hotel in Austin, TX at Doubletree Hotel Austin TX - Nov 7 - 10, 2016
Electric&Hybrid Aerospace Technology Symposium 2016 at Conference Centre East. Koelnmesse (East Entrance) Messeplatz 1 Cologne Germany - Nov 9 - 10, 2016
S2C: FPGA Base prototyping- Download white paper

Internet Business Systems © 2016 Internet Business Systems, Inc.
595 Millich Dr., Suite 216, Campbell, CA 95008
+1 (408)-337-6870 — Contact Us, or visit our other sites:
AECCafe - Architectural Design and Engineering TechJobsCafe - Technical Jobs and Resumes GISCafe - Geographical Information Services  MCADCafe - Mechanical Design and Engineering ShareCG - Share Computer Graphic (CG) Animation, 3D Art and 3D Models
  Privacy Policy