Toshiba Launches 100V N-Channel Power MOSFETs Supporting 4.5V Logic Level Drive for Quick Chargers

TOKYO — (BUSINESS WIRE) — January 11, 2017Toshiba Corporation’s (TOKYO:6502) Storage & Electronic Devices Solutions Company today expanded its line-up of low-voltage N-channel power MOSFETs with the addition of 100V N-channel power MOSFETs supporting 4.5V logic level drive for quick chargers. The two new MOSFETs of the “U-MOS VIII-H Series”, “TPH4R10ANL” and “TPH6R30ANL,” start shipments from today.

This Smart News Release features multimedia. View the full release here: http://www.businesswire.com/news/home/20170111005450/en/

Toshiba: 100V N-Channel Power MOSFET Supporting 4.5V Logic Level Drive for Quick Chargers (Photo: Bu ...

Toshiba: 100V N-Channel Power MOSFET Supporting 4.5V Logic Level Drive for Quick Chargers (Photo: Business Wire)

Along with the spread and evolution of quick chargers, higher performance is demanded for power MOSFETs used in secondary-side rectifiers. The new MOSFETs utilize Toshiba’s low-voltage trench structure process to achieve the industry’s leading-class[1] low on-resistance and high-speed performance. The structure lowers the performance index for “RDS(ON) * Qsw” [2], improving switching applications. Output loss is improved by the reduction of output charge, which can contribute to higher set efficiency. Also, support for 4.5 V logic level drives makes buffer-less drive from the controller IC possible, contributing to reducing power consumption of the system. Furthermore, the new products can respond to the high output and voltage power supplies required in USB 3.0 related applications. The new MOSFETs are suited for applications including quick chargers, switched-mode power supplies and DC-DC converters for servers and communication equipment.

Main Specifications of the New MOSFETs:

(Unless otherwise specified, Ta=25 ℃)

   
Part Number   Polarity  

Absolute
Maximum Ratings

 

Drain-source
On-resistance
RDS(ON) max
(mΩ)

 

Total
Gate
Charge
Qg typ.
(nC)

 

Output
Charge
Qoss typ.
(nC)

 

Gate Switch
Charge Qsw
typ.
(nC)

 

Input
Capacitance
Ciss typ.
(pF)

  Package

Drain-
source
Voltage
V DSS (V)

 

Drain
Current
(DC)
I D (A)
@T c =
25℃

@V GS =
10 V

 

@V GS =
4.5 V

TPH6R30ANL N-ch 100 45 6.3 10.3 55 46 14 3300

SOP
Advance

TPH4R10ANL       70   4.1   6.6   75   74   21   4850  
 

1 | 2  Next Page »



Review Article Be the first to review this article
Aldec

Featured Video
Jobs
Applications Engineer for intersil at Palm Bay, FL
Principle Electronic Design Engr for Cypress Semiconductor at San Jose, CA
ASIC Hardware Engineer for BAE Systems Intelligence & Security at Arlington, VA
Design Verification Engineer for intersil at Morrisville, NC
Senior Electrical Engineer for Allen & Shariff Corporation at Pittsburgh, PA
Upcoming Events
IPC APEX EXPO 2018 at San Diego Convention Center San Diego CA - Feb 24 - 1, 2018
DVCon US 2018 at Double Tree Hotel San Jose CA - Feb 26 - 1, 2018
5th EAI International Conference on Big data and Cloud Computing Challenges at Vandalur, Kelambakkam high road chennai Tamil Nadu India - Mar 8 - 9, 2018
DownStream: Solutions for Post Processing PCB Designs



Internet Business Systems © 2018 Internet Business Systems, Inc.
25 North 14th Steet, Suite 710, San Jose, CA 95112
+1 (408) 882-6554 — Contact Us, or visit our other sites:
AECCafe - Architectural Design and Engineering TechJobsCafe - Technical Jobs and Resumes GISCafe - Geographical Information Services  MCADCafe - Mechanical Design and Engineering ShareCG - Share Computer Graphic (CG) Animation, 3D Art and 3D Models
  Privacy PolicyAdvertise