Fairchild’s Next-Generation PowerTrench MOSFETs Deliver Best-in-Class Performance

New 100V MOSFET is Latest Addition to Fairchild’s Pioneering PowerTrench® MOSFET Portfolio

LONG BEACH, Calif. — (BUSINESS WIRE) — March 21, 2016 — Here at APEC 2016, Fairchild (NASDAQ: FCS), a leading global supplier of high-performance semiconductor solutions, today launched the flagship device of the company’s newest generation of 100V N-channel power MOSFETs, the FDMS86181 100V Shielded Gate PowerTrench® MOSFET. The FDMS86181 is the first part in Fairchild’s new generation of PowerTrench MOSFETs and it delivers substantial improvements in efficiency, reduced voltage ringing and lower electromagnetic interference (EMI) for power supplies, motor drives and other applications requiring a 100V MOSFET.

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Fairchild's next-generation PowerTrench MOSFETs deliver best-in-class performance (Graphic: Business ...

Fairchild's next-generation PowerTrench MOSFETs deliver best-in-class performance (Graphic: Business Wire)

Fairchild was an early pioneer of the successful PowerTrench MOSFET nearly 25 years ago and this latest generation of PowerTrench devices continues to keep the company at the forefront of MOSFET technology development, ahead of competitors and able meet customers’ most demanding system power requirements.

“Our new 100V N-channel FET is a major advance over our previous, industry-leading generation of PowerTrench MOSFETs, and performs dramatically better than its competitors in virtually every performance category, from efficiency through reliability,” said Suman Narayan, Vice President and General Manager of Fairchild’s iFET business unit.

The primary advantages of the new FDMS86181 are its 40 percent reduction in Rdson which lowers conduction losses and its minimized gate charge (Qg) which reduces switching losses. The exceptionally low Qrr of the FDMS86181 virtually eliminates the voltage overshoots that cause ringing, which allows for the reduction or elimination of snubbers in product designs and reduces EMI. This unique advantage of the FDMS86181 allows designers to both reduce product size and bill-of-materials (BOM) costs.

Fairchild will demonstrate the performance of the new FDMS86181 100V Shielded Gate PowerTrench MOSFET in booth #1717 at the APEC conference, March 20-24 in Long Beach, Calif.

Visit fairchildsemi.com/powertrench for samples and more information on the new 100V PowerTrench MOSFET.

About Fairchild:

Fairchild has a rich history as a pioneer in the semiconductor industry and that pioneering spirit endures today in our vision for making the world a cleaner and smarter place. We specialize in the development and manufacturing of a complete portfolio of low- to high-power solutions and deliver an amazing design experience to the engineers and system architects who build systems for the mobile, industrial, cloud, automotive, lighting, and computing industries. Our foundation is our guiding principles, which recognizes the inseparability of engaged employees and delighted customers, and encourages our employees to simplify, challenge, explore, play, excel, respect, go fast, and be direct. If you use a smart phone, drive a car, own a modern appliance, live and work in comfortable connected buildings, or enjoy film animation, you have experienced Fairchild’s Power to Amaze. Please visit us on the web at www.fairchild.com.

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