Toshiba Launches Enterprise SSDs Using 15nm MLC NAND Flash Memory

TOKYO — (BUSINESS WIRE) — February 23, 2016Toshiba Corporation’s (TOKYO:6502) Semiconductor & Storage Products Company today announced the launch of the “HK4R Series” and the “HK4E Series” of enterprise SSDs integrating NAND chips fabricated with 15nm MLC process technology. Sample shipments start from today.

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Toshiba: "HK4* Series" of Enterprise SSDs Using 15nm MLC NAND (Photo: Business Wire)

Toshiba: "HK4* Series" of Enterprise SSDs Using 15nm MLC NAND (Photo: Business Wire)

The new products are Toshiba’s first enterprise SSDs integrating 15nm MLC NAND flash memory. The line-up including products with double the capacity of conventional Toshiba products[1] were developed utilizing the technology. These SSDs expand Toshiba’s enterprise storage solutions and flexibly meet various diversified requirements of the rapidly growing enterprise market.

The SSDs are equipped with Toshiba’s proprietary QSBC (Quadruple Swing-By Code) error correction technology, a highly efficient error correction code (ECC). Along with the power loss protection and data protection features, it helps strengthen the protection of customer data and enhances reliability.

The HK4R Series is capable of one DWPD[2] endurance, and is available in capacities up to 1920GB[3], and suited for enterprise applications including web servers, files servers, media streaming, video-on-demand, search engines and warm data storage.

The HK4E Series of value-endurance drives offer an endurance level of three DWPD and capacities up to 1600GB. It is suited for e-mail servers and data centers.

Toshiba will continue strengthening its SSD lineup, meeting the various needs of users and leading the continuously expanding SSD market.

Outline of the New Products

“HK4R Series”

Form Factor   2.5-type 7.0 mmH
Model Name THNSN8120P   THNSN8240P   THNSN8480P   THNSN8960P   THNSN81Q92
Memory 15 nm MLC NAND flash memory
Capacity 120 GB 240 GB 480 GB 960 GB 1920 GB
Performance  

Sustained
Sequential Read
(64 KiB) [4]

500 MiB/s

Sustained
Sequential Write
(64 KiB)

120 MiB/s 270 MiB/s 480 MiB/s

Sustained
Random Read
(4 KiB)

75 KIOPS

Sustained
Random Write
(4 KiB)

4 KIOPS 10 KIOPS 12 KIOPS 14 KIOPS
Interface ACS-3, SATA revision 3.2
Interface Speed 6.0 Gbit/s , 3.0 Gbit/s , 1.5 Gbit/s
Size Length 100.0 mm
Width 69.85 mm
Height 7.00 mm
DWPD   1
 

“HK4E Series”

Form Factor   2.5-type 7.0 mmH
Model Name THNSN8200P   THNSN8400P   THNSN8800P   THNSN81Q60
Memory 15 nm MLC NAND flash memory
Capacity 200 GB 400 GB 800 GB 1600 GB
Performance  

Sequential Read
(64 KiB)

500 MiB/s

Sequential Write
(64 KiB)

270 MiB/s 400 MiB/s

Random Read
(4 KiB)

75 KIOPS

Random Write
(4 KiB)

20 KIOPS 30 KIOPS
Interface ACS-3, SATA revision 3.2
Interface Speed 6.0 Gbit/s , 3.0 Gbit/s , 1.5 Gbit/s
Size Length 100.0 mm
Width 69.85 mm
Height 7.00 mm
DWPD   3
 

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