Toshiba's GaN-on-Si LEDs Achieve Industry-Leading Luminous Flux

New Lineup of High Power White LEDs Optimized for Output, Power Efficiency

IRVINE, Calif., Oct. 1, 2015 — (PRNewswire) —   Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, today announced that it has added four new products to its TL1L4 series of Gallium Nitride-on-silicon (GaN-on-Si) high power white LEDs. The TL1L4-DW0, TL1L4-NT0, TL1L4-NW0, and TL1L4-WH0 can contribute to improving the luminous efficacy and lowering the power consumption of LED lighting. The new TL1L4 series (4A5B type) achieves a high luminous efficacy of 165lm/W(min.) under Ta=25 degrees C, [1]  and is small in size, making the products appropriate for use in lighting applications including street lights, floodlights, high/low bay lights, base lights and down lights.

Toshiba's new TL1L4 series (4A5B type) of high power white LEDs achieves industry-leading luminous flux, and is appropriate for use in lighting applications including street lights, floodlights, high/low bay lights, base lights and down lights.

The four new LEDs have correlated color temperatures (CCT) of 6500K/5700K/5000K/4000K, with a color rendering index of Ra70. The new additions to the TL1L4 series make it possible to meet the market requirements for lighting fixture efficacy of over 110lm/W[2], and can contribute to improving luminous efficacy and lowering power consumption in LED lighting applications. The TL1L4 series utilizes cost-effective GaN-on-Si wafer technology to create LEDs optimized for both output and power efficiency.

The devices are housed in a compact 3.5 x 3.5mm lens package and rated to support an absolute maximum forward current of 1.5A max at Ta<55 degrees C and Tj<150 degrees C. Hot binning tests for electrical and optical characteristics are conducted at 85 degrees C and IF=350mA that simulate real-life operating conditions.

Part Number

Color

Luminous Flux

Color Rendering

Forward

Package

Temperature

(lm/W)

Index (Ra)

Voltage

L × W (mm)

(K)

@Ta=25 degrees C

@Tj=85 degrees C


VF (V)


TL1L4-DW0,L4A5B

6500

165

140 (min.)

70 (min.)

2.8

3.5 x 3.5     
Lens-package

TL1L4-NT0,L4A5B

5700

165

140 (min.)

70 (min.)

2.8

TL1L4-NW0,L4A5B

5000

165

140 (min.)

70 (min.)

2.8

TL1L4-WH0,L4A5B

4000

165

140 (min.)

70 (min.)

2.8

For more details, samples and pricing information, please contact your local Toshiba Sales Office.

*About Toshiba Corp. and TAEC

About TAEC
Through proven commitment, lasting relationships and advanced, reliable electronic
components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, VARs, distributors and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, solid state drives (SSDs), hard disk drives (HDDs), solid state hybrid drives (SSHDs), discrete devices, custom SoCs/ASICs, imaging products, microcontrollers, wireless components, mobile peripheral devices, advanced materials and medical tubes that make possible today's leading smartphones, tablets, cameras, medical devices, automotive electronics, industrial applications, enterprise solutions and more.

Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's sixth largest semiconductor manufacturer (Gartner, 2014 Worldwide Semiconductor Revenue Estimates, December 2014). Founded in Tokyo in 1875, Toshiba is at the heart of a global network of over 590 consolidated companies employing over 200,000 people worldwide. Visit Toshiba's web site at www.toshiba.co.jp/index.htm.

For additional company and product information, please visit http://www.toshiba.com/taec/.

Notes:
[1] Test conditions: IF=350mA, Ta=25 degrees C
[2] Under conditions of 80% driver efficiency, 90% optical efficiency, Tj=85 degrees C
Industry's leading luminous flux as of February 4, 2015. Toshiba survey

© 2014 Toshiba America Electronic Components, Inc. All rights reserved.
Information in this press release, including product pricing and specifications, content of services and contact information,  is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice.  Technical and application information contained here is subject to the most recent applicable Toshiba product specifications.

MEDIA CONTACT:
Dena Jacobson
Lages & Associates
Tel.: (949) 453-8080
Email Contact

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Photo - http://photos.prnewswire.com/prnh/20150930/272704
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To view the original version on PR Newswire, visit: http://www.prnewswire.com/news-releases/toshibas-gan-on-si-leds-achieve-industry-leading-luminous-flux-300152204.html

SOURCE Toshiba America Electronic Components, Inc.

Contact:
Toshiba America Electronic Components, Inc.
Rebecca Bueno, Toshiba America Electronic Components, Inc., Tel.: (949) 462-7885
Email Contact
Web: http://www.toshiba.com/taec




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