GTS demonstrating predictive, physical simulation of emerging devices at ESSDERC 2015

Sept. 18, 2015 – Global TCAD Solutions GmbH, Vienna, Austria. 

In its workshop „ From Atom to Transistor“, Global TCAD Solutions (GTS) is demonstrating an industry-ready tool flow for achieving new levels of detail in semiconductor device simulation. The workshop, held in collaboration with materialsdesign, Inc., and speakers Ben Kaczer ( IMEC) and Hans Kosina ( IuE, TU Wien) discusses latest simulation models and techniques providing excellent accordance with measured data as well as unprecedented insight in underlying physical phenomena.

The workshop culminates in a live demonstration, showing the ease and efficiency of the used tools, reaching from atom level up to a complete circuit.

Experts in physical device simulation, drilling down to atom level

GTS has been leader in physical device simulation for some time (for instance, introducing surface roughness back at SNW 2013 / SISPAD 2013 to debut in GTS Framework as first commercial solution). With this workshop, GTS is drilling down even further into physics, showing a tool flow starting at ab-initio simulation with materialsdesign’s medeA software, handing over to GTS Framework for device and circuit simulation.

Why physics matters

Traditional empirical TCAD device models are based on assumptions that are no longer true for current and upcoming devices, thus they can yield quite spurious results— potentially leading to sub-optimal design decisions. Especially when examining new device concepts (nanowire, FinFETs, TFETs) or novel materials (SiGe, III/V, GeSn), only a material-specific, physical approach can be an apt base for profound predictive simulation.

Generally, physics-based modeling provides various benefits:
  • Improved prediction window for non-planar devices
  • Portable setup of physical parameters (i.e. from N14 to N10)
  • Avoidance of numerous fitting parameters
  • Consideration of intrinsic material properties is base for path-finding TCAD
  • Better understanding of physical phenomena in general

ESSDERC Workshop: “From Atom to Transistor“

TiN HfO2 interface (c) materials design, inc. Phase-space distribution of electrons in a silicon nanowire FET (c) Global TCAD Solutions GmbH Potential of a 3D poly-Si channel with traps due to grain boundaries (c) Global TCAD Solutions GmbH

50 years after the inception of Moore's Law, industry is facing ever increasing hurdles on the roadmap to produce devices which perform better and consume less power. The challenges in introduction of new technology nodes pose great risks to manufacturers, and there is always more than one possible way to proceed.

Selecting apt models and tools is becoming increasingly important to efficiently gain profound data for making good decisions in device design and optimization. Especially for new technologies and nano-scaled devices, additional physical phenomena, such as quantum effects, need to be considered for meaningful analysis.

In this workshop, a methodological hierarchy of tools will be presented – ranging from atomistic models up to extraction of device parameters and optional circuit simulation, which consistently yields results well-founded in physics.

Emerging device concepts will be covered, demonstrating how the chosen approach can help assess the risks involved in the introduction of new technologies. Depending on the audience’s priorities, a mixed-mode device and circuit simulation can be carried out with the generated data at the end of the live demonstration.

Speakers:

Dr. Erich Wimmer (Materials Design s.a.r.l.) on ab-initio and atomistic simulation

Dr. Hans Kosina (TU Vienna, Institute for Microelectronics) on dissipative quantum transport in nano-scale devices

DI Zlatan Stanojević (GTS) on fast and predictive device simulation

Dr. Ben Kaczer (IMEC) on reliability under variability in nano-scale devices

More information:
http://globaltcad.com/essderc

keywords: TCAD, FinFET, nanowire, ESSDERC, predictive simulation, non-planar, physics-based simulation, device simulation, III/V materials, ab-initio simulation, physical device simulation

About Global TCAD Solutions

As technology leader in 3D TCAD device simulation, Global TCAD Solutions is continuously integrating latest scientific models into its flagship product GTS Framework — a full 2D / 3D TCAD suite including outstanding classical and quantum-mechanical device / circuit simulators, tools for reliability and variability analysis as well as a powerful job server for grid computing. Experts as well as occasional users appreciate the consistent graphical user interface of GTS Framework, for its efficiency and unprecedented ease of use.

As a TCAD vendor actively involved in scientific research, GTS is premier solution provider if one needs profound data to make the right decisions in device design and optimization.

More: http://globaltcad.com/

About ESSDERC

The aim of ESSDERC and ESSCIRC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits. The increasing level of integration for system-on-chip design made available by advances in silicon technology is, more than ever before, calling for a deeper interaction among technologists, device experts, IC designers, and system designers. While keeping separate Technical Program Committees, ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both communities. Attendees registered for either conference are encouraged to attend any of the scheduled parallel sessions, regardless to which conference they belong.

More: http://www.essderc2015.org



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