Tunneling in the Cloud
 — GTS Pushing Limits of TCAD in 4 SISPAD Talks

Sep 10, 2015 – Global TCAD Solutions GmbH, Vienna, Austria.

GTS Framework integrates grid and cloud computing for the first time in TCAD

4 SISPAD Talks, Pushing the Limits of TCAD

At SISPAD 2015, Global TCAD Solutions (GTS) is again strengthening its technological leadership in TCAD device simulation in general as well as specifically in physical simulation of non-planar technologies and ultra-scaled transistors. In 4 oral presentations (two in collaboration with TU Vienna), GTS scientists show innovations ranging from new methods of FinFET simulation to TCAD cloud computing – all based on GTS’ flagship product, GTS Framework.

TCAD – From Grid to the Cloud

BTI-induced Vth-shift in an ensemble of n-FinFETs with randomly positioned oxide traps, simulated with GTS Framework

While being the silent leading specialist for predictive and physics-based simulation, GTS is presenting innovations on a much wider range – such as introduction of cloud computing to TCAD for greater flexibility over traditional grid-based systems like SGE or LSF. The presented study conducted by GTS scientists resumes that for time-critical, large-scale TCAD applications, a hybrid system is a feasible and economical approach. Therefore, GTS developers have extended the job server of GTS Framework to dynamically distribute tasks to both a grid system and a cloud at the same time. A special algorithm, combining scheduling with heuristics, was implemented for achieving minimal run time at optimal cost-efficiency. These unique features will be available right with the next release of GTS Framework.

Read more here in our hot topic: Grid and Cloud Computing in TCAD

Profound Scientific Background in Physical Simulation

Global TCAD Solutions is operating on a strong scientific background to supply clients with highly efficient yet scientifically sound solutions for making the right decisions in device design and optimization. As the leading specialist in predictive, physics-based simulation, offering unique and unprecedented solutions in this area, GTS’s favorite topics are upcoming device architectures (like FinFETs, nano wires, and tunneling FETs) and novel materials such as SiGe, III/V, GeSn. GTS is proud of its staff looking back at a considerable history of innovations and scientific publications.

Four GTS talks at SISPAD:

Thu, Sept. 10: Paper Session 10: Novel TCAD Applications

1:50 PM     Harald Demel             Expanding TCAD Simulations from Grid to Cloud
2:50 PM     Christian Kernstock      Layout-Based TCAD Device Model Generation

Thu, Sept. 10: Paper Session 11: Silicon Devices

3:30 PM    Oskar Baumgartner     Efficient Modeling of Source/Drain Tunneling in Ultra-Scaled Transistors

Fri, Sept. 11: Paper Session 13: FinFETs

9:50 AM    Markus Karner           Hierarchical TCAD Device Simulation of FinFETs

More information at http://globaltcad.com/sispad



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