Renesas Electronics Introduces 16- and 32-Megabit Advanced Low Power SRAMs With Over 500 Times the Resistance to Soft Errors Compared to Full CMOS Memory Cells

(Note 3) Full CMOS memory cells:
A SRAM memory cell configuration in which a total of six P-channel MOS transistor and N-channel MOS transistor elements are formed on the same plane of the silicon substrate. The surface area is large and there is a latch-up risk.

(Note 4) Stacked capacitor:
Capacitors with two electrodes formed from polysilicon or metal. These capacitors are formed on the upper layer of the MOS transistors on the silicon substrate.

(Note 5) Memory node:
Flip-flop circuit nodes within each memory cell that store bits of information as “high” or “low” electric potential.

(Note 6) Renesas has published on its website the results of its evaluations of soft errors in systems employing Advanced LP SRAM. These evaluations were run for more than a year under conditions similar to the usage environment of average users, and in the end no errors were detected. See the following URL for details:

(Note 7) Thin-film transistor (TFT):
A transistor formed from thin-film polysilicon. Such elements are used as the SRAM load transistors, formed on the top layer of the MOS transistors on the silicon substrate.

(Note 8) Latch-up:
A phenomenon in which an NPN or PNP structure (parasitic bipolar transistor) formed by the well, silicon substrate, P-type diffusion layer, and N-type diffusion layer of a CMOS transistor enters the on state due to overvoltage from the power supply or input pins, allowing a large current to flow between the power supply and ground.

(Note 9) Reference values at a power supply voltage of 3.0 V and ambient temperature of 25°C.

(Note 10) The R1LV1616R Series and R1WV3216R Series, which employ the 150 nm process.

About Renesas Electronics Corporation

Renesas Electronics Corporation (TSE: 6723), the world’s number one supplier of microcontrollers, is a premier supplier of advanced semiconductor solutions including microcontrollers, SoC solutions and a broad-range of analog and power devices. Business operations began as Renesas Electronics in April 2010 through the integration of NEC Electronics Corporation (TSE:6723) and Renesas Technology Corp., with operations spanning research, development, design and manufacturing for a wide range of applications. Headquartered in Japan, Renesas Electronics has subsidiaries in 20 countries worldwide. More information can be found at

(Remarks) All registered trademarks or trademarks are the property of their respective owners.

Separate Sheet


Main Specifications of RMLV1616A Series and RMWV3216A Series

(16- and 32-Megabit Devices Using the 110 nm Process)


Power supply voltage: 2.7 V to 3.6 V

Minimum voltage when retaining data: 1.5 V


Product No.   Capacity   Word Organization   Package   Access Time   Standby Current   Sample Price   Sample Shipment
RMLV1616AGBG-5S2   16 Mb   ×16   FBGA (48)   55 ns   Up to 25°C:

0.5 μA (typ.)

3μA (max.)

Up to 40°C:

0.8 μA (typ.)

6 μA (max.)

Up to 70°C:

2.5 μA (typ.)

12 μA (max.)


Up to 85°C:

5 μA (typ.)

16 μA (max.)



  Sep. 2015
RMLV1616AGSA-5S2 TSOP I (48) Jan. 2016
RMLV1616AGSD-5S2     μTSOP II (52)     Sep. 2015
RMWV3216AGBG-5S2   32 Mb     FBGA (48)     Up to 25°C:

1μA (typ.)

6μA (max.)


Up to 40°C:

1.6 μA (typ.)

12 μA (max.)


Up to 70°C:

5 μA (typ.)

24 μA (max.)


Up to 85°C:

10 μA (typ.)

32 μA (max.)

  US$31   Sep. 2015

(Remarks) All names of products or services mentioned in this press release are trademarks or registered trademarks of their respective owners.

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