Application Note Demonstrates NI AWR Design Environment Load-Pull Technology for the Design of Wideband High-Efficiency PAs

EL SEGUNDO, Calif. – April 15, 2015  -- NI (formerly AWR Corporation) announces a new application note titled “ Using NI AWR Design Environment Load-Pull Simulation for the Designer of Wideband High-Efficiency PAs” that explores the design of power amplifiers (PAs) leveraging load-pull technology within NI AWR Design Environment™ software, specifically that of Microwave Office. Using a Cree CGH40010F gallium nitride high-electron mobility transistor in a Class F PA at 2000 MHz as the example circuit, the application note details how power-added efficiency is maximized by optimizing source and load pull at the fundamental frequency, plus second and third harmonics. Additionally, the ability of the load-pull technique to inspect transistor voltage and current waveforms helps users gain confidence in their high performance designs.


“Using NI AWR Design Environment Load-Pull Simulation for the Designer of Wideband High-Efficiency PAs” application note is found online at



AWR, Microwave Office, National Instruments, NI and are trademarks of National Instruments. Other product and company names listed are trademarks or trade names of their respective companies.

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