Crossbar to Demonstrate Breakthrough Resistive RRAM Innovation at IEDM 2014

Unveils Major Technical Milestone in the Development of Ultra-High Density Non-Volatile Memory Solutions

SANTA CLARA, Calif. — (BUSINESS WIRE) — December 8, 2014Crossbar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, today announced it will be disclosing another major technology breakthrough in their development of Resistive RAM (RRAM) at next week’s IEEE International Electron Devices Meeting (IEDM). Continuing to meet key technological milestones, the company first unveiled its RRAM technology in August 2013 and then demonstrated pre-production 1MB arrays using Crossbar’s patented “1TnR” technology for read/write operations in June 2014.

Presented by Dr. Sung Hyun Jo, Crossbar senior fellow, the presentation will discuss how to overcome a common design challenge in high-density RRAM development, and will describe how a Field Assisted Superlinear Threshold (FAST) selector device can successfully suppress the sneak path current inherent in RRAM memory, another significant milestone needed to commercialize RRAM memory for high-density data applications.

Presentation Title: 3D-stackable Crossbar Resistive Memory Based on Field Assisted Superlinear Threshold (FAST) Selector

Speaker: Sung Hyun Jo, Ph.D., Crossbar’s Senior Fellow, Technology Development

When: Monday, December 15th at 4:05 pm

Track: Session 6: Memory Technology – Resistive RAM

Where: IEDM Conference in the Hilton San Francisco Union Square, San Francisco, CA

Location: Continental Ballroom 6

About Crossbar, Inc.

Founded in 2010 as a Kleiner Perkins Caufield & Byers incubation, Crossbar, a start-up based in Santa Clara, California, is the inventor of a new class of non-volatile RRAM memory technology. Designed to usher in a new era of electronics innovation, Crossbar will deliver up to a terabyte (TB) of storage on a single-chip the size of a postage stamp, with very low power, very high performance and compatibility with standard CMOS semiconductor manufacturing tools, processes and infrastructure. As the exclusive holder of resistive RAM (RRAM) patents from the University of Michigan, Crossbar has filed 152 unique patents, with 62 already issued. Crossbar is backed by Artiman Ventures, Kleiner Perkins Caufield & Byers, Northern Light Venture Capital, the University of Michigan, SAIF Partners, Korea Investment Partners, CBC-Capital and Tao Invest. For more information, visit or follow us on  TwitterLinkedIn and  Google+.

Copyright 2014. All rights reserved. Crossbar, Inc., the Crossbar logo, and certain other Crossbar trademarks and logos are trademarks and/or registered trademarks of Crossbar, Inc.


Crossbar Media Contact:
Tanis Communications
Nicole Conley, 650-422-3156
Email Contact

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