Toshiba Launches Low-height Package, Rail-to-Rail Output Gate-drive Photocouplers

TOKYO — (BUSINESS WIRE) — September 5, 2014Toshiba Corporation (TOKYO:6502) today announced the launch of rail-to-rail output gate-drive photocouplers in low-height SO6L packages, for use in directly driving low- to medium-power IGBTs and power MOSFETs. Mass production shipment will start from today.

Toshiba: Low-height SO6L Package, Rail-to-Rail Output Gate-drive Photocoupler (Photo: Business Wire)

Toshiba: Low-height SO6L Package, Rail-to-Rail Output Gate-drive Photocoupler (Photo: Business Wire)

The new photocouplers, “TLP5751” for driving small-power IGBTs and “TLP5752” and “TLP5754” for driving middle-power IGBTs, utilize the low-height SO6L package. At only 54% the height and 43% the mounting area of Toshiba products that use the DIP8 package, the new products can contribute to the development of thinner and smaller sets. In spite of their low height, the products guarantee a creepage distance of 8mm and isolation voltage of 5kV, making them suitable for applications requiring higher isolation specs.

As for electrical characteristics, the new photocouplers have rail-to-rail output which enables higher efficiency by making operation voltage wider in full-swing. They are available in three output currents, 1A, 2.5A and 4A, to meet a wide range of user requirements. They are also embedded with Toshiba’s original high-power infrared LED, allowing it to be used in a wide range of applications, including those that require high thermo-stability, such as factory automation, home photovoltaic power systems, digital home appliances and UPS.

 

 Key Specifications of the New Products 

Part Number   TLP5751   TLP5752   TLP5754
Peak Output Current ±1.0A   ±2.5A   ±4.0A
Power Supply Voltage 15~30V
Supply Current 3mA (max.)
Threshold Input Current 4mA (max.)
Propagation Delay Time 150ns (max.)
Propagation Delay Skew 80ns (max.)
Rail-to-Rail Output Equipped
VUVLO Function Equipped
Creepage Distance 8mm (min.)
Isolation Voltage 5000Vrms (min.)
Common Mode Transient Immunity ±35 kV/µsec
Operation Temperature Range -40~110 ºC
Accommodated power devices  

Low-power
IGBTs (up to
20A class) and
power MOSFETs

 

Middle-power
IGBTs (up to
80A class) and
power MOSFETs

 

Middle-power
IGBTs (up to
100A class) and
power MOSFETs

 

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