EL SEGUNDO, Calif. – June 23, 2014
NI (formerly AWR Corporation)has published a new success story detailing how Ahsan U. Alam, a University of Alberta, Canada graduate student, successfully developed a modified top-of-the-barrier model for graphene field-effect transistors (GFETs) using NI AWR Design Environment™/ Microwave Office® circuit design software. Likewise, an IEEE paper detailing this venture was also recently presented and presented at the IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2013).
The full success story can be viewed at awrcorp.com/customer-stories/university-alberta.
Vice President of Marketing,