Toshiba Expands Line-up of 650V SiC Schottky Barrier Diodes

TOKYO — (BUSINESS WIRE) — May 30, 2014Toshiba Corporation’s (TOKYO: 6502) Semiconductor & Storage Products Company today announced that it will expand its family of 650V silicon carbide (SiC) schottky barrier diodes (SBD) with the addition of insulated TO-220F-2L package products. The 4 new products expand the 6A, 8A, 10A and 12A line-up from the current TO-220-2L package products. Mass production shipment starts from today.

Toshiba: 650V SiC Schottky Barrier Diode in an Insulated TO-220F-2L Package (Photo: Business Wire)

Toshiba: 650V SiC Schottky Barrier Diode in an Insulated TO-220F-2L Package (Photo: Business Wire)

SBDs are suited for applications including server power supplies and power conditioners for photovoltaic power generation systems. SBDs can also act as replacements for silicon diodes in switching power supplies, where they are 50% more efficient (Toshiba survey).

SiC power devices offer more stable operation than current silicon devices - even at high voltages and currents - as they significantly reduce heat dissipation during operation. They meet diverse industry needs for smaller, more effective communications devices and suit industrial applications ranging from servers to inverters.

         

Key Specifications of the New Products

Part Number

VRRM
(V)

IF
(A)

VF (V) IRRM (μA) Package
typ./max typ./max
TRS6A65C 650 6 1.5 / 1.7 0.3 / 90 TO-220F-2L
TRS8A65C 650 8 1.5 / 1.7 0.4 / 90
TRS10A65C 650 10 1.5 / 1.7 0.42 / 90
TRS12A65C   650   12   1.54 / 1.7   0.45 / 90  
 

Current Line-up

Part Number  

VRRM
(V)

 

IF
(A)

  VF (V)   IRRM (μA)   Package
typ./max. typ./max.
TRS6E65C 650 6 1.5 / 1.7 0.3 / 90 TO-220-2L
TRS8E65C 650 8 1.5 / 1.7 0.4 / 90
TRS10E65C 650 10 1.5 / 1.7 0.42 / 90
TRS12E65C 650 12 1.54 / 1.7 0.45 / 90
TRS12N65C 650 12 1.5 / 1.7 0.3 / 90 TO-247
TRS16N65C 650 16 1.5 / 1.7 0.4 / 90
TRS20N65C 650 20 1.5 / 1.7 0.42 / 90
TRS24N65C   650   24   1.5 / 1.7   0.43 / 90  
 

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