Efficient Power Conversion (EPC) Experts to Demonstrate How eGaN FETs Increase Efficiency by 20% in Wireless Power Applications at Key Power Industry Conferences in Asia

EPC experts will be making technical presentations on GaN FET technology at three industry-leading conferences in Asia Electronica China, IIC China Power Management and Semiconductor and International Workshop on Wide Band Gap Power Electronics 2014 in Taiwan

EL SEGUNDO, Calif. — (BUSINESS WIRE) — March 12, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors, will be making presentations at three industry-leading power conferences in Asia.

At two conferences in Shanghai, China on March 18th, EPC technical experts will be presenting how gallium nitride (GaN) power devices have emerged as higher efficiency replacements for the aging silicon (Si) power MOSFETs. Specifically, increases in performance offered by eGaN FETs in wireless power transfer (WiPo) applications will be presented. Examples of increased performances include a new power conversion design that delivers up to 20% improvement in efficiency and a second design delivering up to 30 W operating with loosely coupled coils in the 6.78 MHz ISM band.

On April 10, EPC’s CEO and Co-founder Dr. Alex Lidow will be giving an update on GaN technology entitled, "Crushing Silicon with GaN." This presentation will highlight key new applications, latest products on the market, latest road maps into the future, and the relative competitive position of GaN with the power MOSFET and silicon carbide.

Summary of Upcoming EPC Conferences in Asia:

 

  Electronica China
Date:   March 18, 2014
Title:

"Improving Wireless Energy Transfer Performance with eGaN® FET-based Converter"

Presenters: Dr. Michael de Rooij, Executive Director of Application Engineering
Peter Cheng, Director of FAE for Asia
 

IIC Spring Conference, Power Management and Semiconductor
Date: March 18, 2014
Title:

"Improving Wireless Energy Transfer Performance with eGaN ® FET-based Converter"

Presenters: Dr. Michael de Rooij, Executive Director of Application Engineering
Peter Cheng, Director of FAE for Asia
 

International Workshop on Wide Band Gap Power Electronics 2014 (IWWPE)
Date:

April 10, 2014

Title: “Crushing Silicon with GaN”
Presenter:

Dr. Alex Lidow, EPC CEO and Co-founder

 

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