Toshiba Expands Line-Up of Low Voltage N-channel MOSFET

Low On-resistance Reduces Conduction Loss in Mobile Equipment

TOKYO — (BUSINESS WIRE) — July 10, 2013Toshiba Corporation (TOKYO:6502) today announced that it has expanded its line-up of low voltage N-channel MOSFETs, used in protection circuits for lithium ion batteries and the power management switches of mobile equipment, with the "TPN2R203NC". Fabricated with eighth generation process, TPN2R203NC realizes low ON-resistance, which reduces conduction loss in equipment.

Toshiba Low Voltage N-channel MOSFET "TPN2R203NC" (Photo: Business Wire)

Toshiba Low Voltage N-channel MOSFET "TPN2R203NC" (Photo: Business Wire)

Key Features

Eighth generation process realizes low ON-resistance.

2. TSON Advance package with good thermal conductivity.
3. High avalanche resistance.

Main specifications

Part Number   Package   VDSS (V)   RDS(ON) (mΩ)
VGS=10V   VGS=4.5V
Typ.   Max Typ.   Max
TPN2R203NC   TSON Advance   30   1.8   2.2   2.8   3.6

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