Fairchild Semiconductor’s 100V BoostPak Solution Provides Improved Reliability, Reduces System Costs in LED Applications

Integrated Solution Features MOSFET and Diode in One Package, Simplifying Board Assembly and Saving Space

SAN JOSE, Calif. — (BUSINESS WIRE) — June 3, 2013 — Fairchild Semiconductor, (NYSE: FCS) a leading global supplier of high performance power and mobile semiconductor solutions, optimizes the MOSFET and diode selection process by introducing a family of 100 V BoostPak devices that combines a MOSFET and diode in one package to replace discrete solutions currently used in LED TV / monitor backlight, LED lighting and DC-DC converter applications.

By integrating the MOSFET and diode into a single package, the FDD1600N10ALZD and FDD850N10LD devices save board space, simplify assembly, lower bill of material (BOM) costs and improve reliability of the application.

The devices feature an N-channel MOSFET produced using Fairchild’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. The NP diode is a hyperfast rectifier with low forward voltage drop and excellent switching performance. It has much lower leakage current than a Shottky diode, which improves system reliability in high temperature applications.

Key Features:

FDD1600N10ALZD:

  • RDS(ON) = 124 mΩ (Typ.)@ VGS = 10 V, ID = 3.4 A
  • RDS(ON) = 175 mΩ (Typ.)@ VGS = 5 V, ID = 2.1 A
  • Low Gate Charge = 2.78 nC (Typ.)
  • Low Crss = 2.04 pF (Typ.)

FDD850N10LD:

  • RDS(ON) = 61 mΩ (Typ.)@ VGS = 10 V, ID = 12 A
  • RDS(ON) = 64 mΩ (Typ.)@ VGS = 5.0 V, ID = 12 A
  • Low Gate Charge = 22.2 nC (Typ.)
  • Low Crss = 42 pF (Typ.)

Both:

  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS compliant

Packaging and Pricing Information

Price: in 1,000 quantity pieces

FDD1600N10ALZD:

          US$0.49
 

FDD850N10LD:

US$0.57

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