Microsemi in Development on Intel's 22 Nanometer Tri-Gate Transistor Technology; Product Deliveries Expected to Begin in Late 2014 to Early 2015ALISO VIEJO, Calif., May 1, 2013 — (PRNewswire) — Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced it is leveraging Intel Corporation's (Nasdaq: INTC) industry-leading, onshore foundry technology for the development of advanced high-performance digital integrated circuits (ICs) and system-on-chip (SoC) solutions using Intel's revolutionary 22 nanometer (nm) 3-D Tri-Gate transistor technology.
Consistent with Microsemi's strategy, this agreement signed in January 2013 will leverage the company's comprehensive technology portfolio into higher-performance, higher-dollar value opportunities. Intel's Tri-Gate transistors provide an unprecedented combination of performance and power efficiency, enabling Microsemi to develop digital ICs for high-performance computing, network acceleration and signal processing applications. Microsemi is currently engaged with customers and has started designs utilizing Intel's 22nm process node with product delivery anticipated to begin in late 2014 to early 2015.
"The high-value applications we address require semiconductor solutions with unique performance and complex functional attributes," said Paul Pickle, executive vice president of Microsemi's Integrated Circuits group. "Using Intel's innovative process technology and silicon-proven IP will enable us to expand our opportunity in the markets we serve with higher-performance, lower-power digital ICs for the communications and defense markets."
"Intel is pleased to manufacture Microsemi's digital IC solutions utilizing Intel's leading 22nm process technology and IP solutions," said Sunit Rikhi, vice president, Technology and Manufacturing Group, Intel.
About Intel's 3-D Tri-Gate Transistors
Intel's 3-D Tri-Gate transistors are a reinvention of the transistor. The traditional "flat" two-dimensional planar gate is replaced with an incredibly thin three-dimensional silicon fin that rises up vertically from the silicon substrate. Control of current is accomplished by implementing a gate on each of the three sides of the fin—two on each side and one across the top—rather than just one on top, as is the case with the 2-D planar transistor. The additional control enables as much transistor current flowing as possible when the transistor is in the "on" state (for performance), due to the lower parasitics of the tri-gate structure and as close to zero as possible when it is in the "off" state (to minimize power). This enables the transistor to switch very quickly between the two states (again, for performance). To put the speed into perspective, a 22nm transistor can switch off and on well over a billion times in one second.
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance, radiation-hardened and highly reliable analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more at www.microsemi.com.
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"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Any statements set forth in this news release that are not entirely historical and factual in nature, including without limitation statements related to its relationship and manufacturing agreement with Intel, and its potential effects on future business, are forward-looking statements. These forward-looking statements are based on our current expectations and are inherently subject to risks and uncertainties that could cause actual results to differ materially from those expressed in the forward-looking statements. The potential risks and uncertainties include, but are not limited to, such factors as rapidly changing technology and product obsolescence, potential cost increases, variations in customer order preferences, weakness or competitive pricing environment of the marketplace, uncertain demand for and acceptance of the company's products, adverse circumstances in any of our end markets, results of in-process or planned development or marketing and promotional campaigns, difficulties foreseeing future demand, potential non-realization of expected orders or non-realization of backlog, product returns, product liability, and other potential unexpected business and economic conditions or adverse changes in current or expected industry conditions, difficulties and costs of protecting patents and other proprietary rights, inventory obsolescence and difficulties regarding customer qualification of products. In addition to these factors and any other factors mentioned elsewhere in this news release, the reader should refer as well to the factors, uncertainties or risks identified in the company's most recent Form 10-K and all subsequent Form 10-Q reports filed by Microsemi with the SEC. Additional risk factors may be identified from time to time in Microsemi's future filings. The forward-looking statements included in this release speak only as of the date hereof, and Microsemi does not undertake any obligation to update these forward-looking statements to reflect subsequent events or circumstances.
Gwen Carlson, Director of Corporate Communications
Beth P. Quezada, Communications Specialist
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SOURCE Microsemi Corporation