Toshiba to Launch High-current P-ch MOSFETs for Charging Circuits of Mobile Devices

Latest addition to the high-power dissipation package line-up

TOKYO — (BUSINESS WIRE) — February 18, 2013Toshiba Corporation (TOKYO:6502) today announced that it has launched P-ch MOSFETs for switches of high-current charging circuit switches of mobile devices such as smartphones and tablets.

Toshiba High-current P-ch MOSFETs for Charging Circuits of Mobile Devices (Photo: Business Wire)

Toshiba High-current P-ch MOSFETs for Charging Circuits of Mobile Devices (Photo: Business Wire)

As additional functions are added to mobile devices such as smartphones and cellular phones, tablets and notebook PCs, and digital cameras and digital video cameras—and as more demands are made on their batteries—efforts continue to boost charge density and to improve the user experience by significantly increasing charging current to cut charge times. Toshiba's new "SSM6J505NU" and "SSM6J216FE" are the company's latest additions to its high-current P-ch MOSFET line-up of high-power dissipation packages.

Applications
High-current charging switches for mobile devices like smartphones and cellular phones, tablets and notebook PCs, digital cameras and digital video cameras.

Key Features
1. High-current
2. Low ON-resistance
3. Low capacitance
4. High-power dissipation package line-up including small packages

 

Main Specifications

Package   Part number   FET
num.
  VDSS
(V)
  VGSS
(V)
  ID(DC)
(A)
  RDS(ON) typ. (mΩ)   Ciss
(pF)
  PD
(W)
VGS=
-2.5 V
  VGS=
-4.5 V

SOT-1220
(UDFN6B)
2.0×2.0mm

SSM6J505NU

Single -12 ±6 -12 11 9 2700 1.25
SOT-563
(ES6)
1.6×1.6mm
 

SSM6J216FE

  Single   -12   ±8   -4.8   31.5   26.0   1040   0.5
 

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