TriQuint Achieves Record GaN Reliability Performance

TriQuint’s New Process Enables More Robust, High-Efficiency RF Devices

HILLSBORO, Ore. & RICHARDSON, Texas — (BUSINESS WIRE) — November 26, 2012TriQuint Semiconductor, Inc. (NASDAQ: TQNT), a leading RF products manufacturer and foundry services provider, has achieved record-setting gallium nitride (GaN) circuit reliability that exceeds previous industry standards.

TriQuint’s new GaN benchmark supports highly-reliable integrated RF solutions that use less power, are compact, and serve wide frequency ranges. Any RF system can benefit from reduced maintenance and longer operational lifetimes arising from increased reliability such as commercial and defense RF infrastructure, broadband communications, first-responder radios and space-based applications.

“We’re pleased to announce this new GaN reliability milestone,” said James L. Klein, Vice President and GM for Infrastructure and Defense Products. “The achievement supports our foundry services and helps us accelerate product development. We are delivering more products and services than ever before.”

TriQuint’s TQGaN25 process, qualified to operate up to 40 Volts, has achieved a mean time to failure (MTTF) of greater than 10 million hours* at 200 degrees (C) and greater than 1 million hours* at 225 degrees (C). This reliability milestone was achieved with TriQuint’s newly-released Generation II 0.25-micron GaN on SiC (silicon carbide) process utilized for GaN product solutions and Foundry Services.

TriQuint achieved its new GaN performance through in-house development programs. This new reliability also supports objectives of TriQuint’s Defense Production Act (DPA) Title III contract that is funded by the Department of Defense Tri-Services laboratories including the U.S. Air Force, Army and Navy. TriQuint is also reducing manufacturing cycle times and increasing yields while making other GaN enhancements that work hand-in-hand with DPA Title III goals.

All manufacturing enhancements are designed to support greater affordability of next-generation AESA (active electronically scanned array) radars, new EW systems and commercial applications. Defense systems currently in technology development phases have production planned for 2016-2020.

TriQuint announced the reliability of its TQGaN25 process in connection with the Defense Manufacturing Conference (DMC), November 26-29 in Orlando, Florida. Visit TriQuint in Booth 328 or contact TriQuint to schedule a meeting about GaN, gallium arsenide (GaAs), or advanced acoustic filter technology including SAW and BAW solutions for commercial and defense systems.

         

TriQuint Gallium Nitride Product Innovation, Honors and Resources

 
Heritage Leader in defense and commercial GaN research since 1999
 
Research

Leader in performance and reliability GaN development

 
University Partners

University of Bristol , Massachusetts Institute of Technology ,

University of Notre Dame and University of Colorado at Boulder

 
The Global GaN Impact

Strategy Analytics recognizes TriQuint’s GaN R&D / GaN Product Innovation

 
Active R&D programs

DARPA NEXT program for highly complex, high frequency GaN MMICs

 

Defense Production Act (DPA) Title III program for GaN on SiC ; Radar and EW MMICs: Air Force and Navy sponsors

 

DARPA Microscale Power Conversion program to develop ultra-fast GaN power switch technology that is integrated into next-generation amplifiers

 

DARPA Near Junction Thermal Transport (NJTT) GaN program to increase circuit power handling capabilities through enhanced thermal management

 

Army Research Laboratory (ARL) Cooperative Research and Development Agreement (CRADA) to jointly develop advanced GaN circuits

 
Recent Honors

2011 ‘Compound Semiconductor’ CS Industry Award for DARPA NEXT; 2012 CS Industry Award for DARPA MPC program; other awards

 
GaN Products

Wide selection of innovative GaN amplifiers, transistors and switches

 
GaN Foundry

0.25-micron GaN on SiC ; 100mm wafers; DC-18 GHz applications

 

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