MoSys to Present “Pushing DDR3 Further” at Denali Memcon

SUNNYVALE, Calif. — (BUSINESS WIRE) — July 27, 2010 — MoSys, Inc.:

Who:

  Ali Burney, director of Marketing at MoSys (NASDAQ: MOSY), a leading provider of serial chip-to-chip communications solutions that deliver unparalleled bandwidth performance for next generation networking systems and advanced system-on-chip (SoC) designs, will be speaking at Denali Memcon 2010.

What:

Burney’s presentation, “Pushing DDR3 Further,” examines high speed DDR3 for 1600 Mbps wirebond and 2133 Mbps Flipchip implementations. He will present and discuss the challenges of high speed DDR3 PHY implementations and the solutions to support DDR3 at 1600 Mbps in a wirebond package, as well as hurdles that need to be cleared to support 2133 Mbps in a flipchip package.

When:

Burney’s presentation takes place on July 28, 2010, at 11:45 a.m.

Where:

Hyatt Regency Santa Clara

5101 Great American Parkway

Santa Clara, CA 95054

About MoSys, Inc.

MoSys, Inc. (NASDAQ: MOSY) is a leading provider of serial chip-to-chip communications solutions that deliver unparalleled bandwidth performance for next generation networking systems and advanced system-on-chip (SoC) designs. MoSys’ Bandwidth Engine™ family of ICs combines the company’s patented 1T-SRAM® high-density memory technology with its high-speed 10 Gigabits per second (Gbps) SerDes interface (I/O) technology. A key element of Bandwidth Engine technology is the GigaChip™ Interface, an open, CEI-11 compatible interface developed to enable highly efficient serial chip-to-chip communications. MoSys' IP portfolio includes SerDes IP and DDR3 PHYs that support data rates from 1 - 11 Gbps across a variety of standards. In addition, MoSys offers its flagship, patented 1T-SRAM and 1T-Flash® memory cores, which provide a combination of high-density, low power consumption, high-speed and low cost advantages for high-performance networking, computing, storage and consumer/graphics applications. MoSys IP is production-proven and has shipped in more than 325 million devices. MoSys is headquartered in Sunnyvale, California. More information is available on MoSys' website at http://www.mosys.com.

MoSys, 1T-SRAM and 1T-Flash are registered trademarks of MoSys, Inc. The MoSys logo and Bandwidth Engine are trademarks of MoSys, Inc. All other marks mentioned herein are the intellectual property of their respective owners.



Contact:

Media Contact:
Shelton Group
Katie Olivier, 972-239-5119 x128
Email Contact
or
Corporate Contact:
MoSys, Inc.
Kristine Perham, 408-731-1804
Email Contact




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