Silego Introduces New GFET3 Integrated Power Switches and Advances the State-of-the Art in Low RDSON, High-Current Performance

Unlike other products on the market with similar RDSON/IDS performance, these new 4 mΩ, 2 A and 4 A GFET3 integrated power switches occupy only 4 mm2 and incorporate valuable system-level features such as inrush current control, FET current monitoring, two-level current limiting and thermal shutdown protection.

SANTA CLARA, Calif. — (BUSINESS WIRE) — June 7, 2016 — Silego Technology, a developer of highly configurable and cost-effective mixed signal products, today announced an expansion of its state-of-the-art portfolio with a new family of high-performance, GFET3 integrated power switches. Operating from 2.5 V to 5.5 V supplies, these new single-channel GFET3 nFET integrated power switches were designed for all high-side, 0.8 V to 5.5 V power rail applications. Using Silego’s proprietary MOSFET design IP, these new feature-rich integrated power switches maintain an ultra-stable 4 mΩ RDSON across the applied input voltage range and over temperature. Applying Silego’s proprietary CuFET™ technology, Silego’s design engineers deftly packaged these new products in low thermal-resistance footprints for high-current operation.

The SLG59M1714V – the flagship of these four new products – incorporates a 15-mΩ, back-to-back reverse block nFET arrangement for those applications where VOUT-to-VIN backfeed current to the VIN power source is to be avoided. In addition, the SLG59M1714V’s IOUT feature offers substantial system BOM cost/pcb savings by eliminating the need for an external current shunt resistor, a difference/level-shifting amplifier and associated passive components to measure directly FET current.

Designed to operate over a -40°C to 85°C range, all four products are available in RoHS-compliant STQFN-16 packaging.

Silego’s newest additions to its industry-leading GFET3 products include:















SLG59M1709V   4 mΩ   4                
SLG59M1710V   4 mΩ   2                
SLG59M1711V   4 mΩ   2               X
SLG59M1714V   15 mΩ   4   X   X   MOSFET I DS   X

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