Silego Introduces New GFET3 Integrated Power Switches and Advances the State-of-the Art in Low RDSON, High-Current Performance

Unlike other products on the market with similar RDSON/IDS performance, these new 4 mΩ, 2 A and 4 A GFET3 integrated power switches occupy only 4 mm2 and incorporate valuable system-level features such as inrush current control, FET current monitoring, two-level current limiting and thermal shutdown protection.

SANTA CLARA, Calif. — (BUSINESS WIRE) — June 7, 2016 — Silego Technology, a developer of highly configurable and cost-effective mixed signal products, today announced an expansion of its state-of-the-art portfolio with a new family of high-performance, GFET3 integrated power switches. Operating from 2.5 V to 5.5 V supplies, these new single-channel GFET3 nFET integrated power switches were designed for all high-side, 0.8 V to 5.5 V power rail applications. Using Silego’s proprietary MOSFET design IP, these new feature-rich integrated power switches maintain an ultra-stable 4 mΩ RDSON across the applied input voltage range and over temperature. Applying Silego’s proprietary CuFET™ technology, Silego’s design engineers deftly packaged these new products in low thermal-resistance footprints for high-current operation.

The SLG59M1714V – the flagship of these four new products – incorporates a 15-mΩ, back-to-back reverse block nFET arrangement for those applications where VOUT-to-VIN backfeed current to the VIN power source is to be avoided. In addition, the SLG59M1714V’s IOUT feature offers substantial system BOM cost/pcb savings by eliminating the need for an external current shunt resistor, a difference/level-shifting amplifier and associated passive components to measure directly FET current.

Designed to operate over a -40°C to 85°C range, all four products are available in RoHS-compliant STQFN-16 packaging.

Silego’s newest additions to its industry-leading GFET3 products include:















SLG59M1709V   4 mΩ   4                
SLG59M1710V   4 mΩ   2                
SLG59M1711V   4 mΩ   2               X
SLG59M1714V   15 mΩ   4   X   X   MOSFET I DS   X

1 | 2  Next Page »

Review Article Be the first to review this article

Featured Video
Applications Engineer for intersil at Palm Bay, Florida
Senior Electrical Engineer for Allen & Shariff Corporation at Pittsburgh, Pennsylvania
Design Verification Engineer for intersil at Morrisville, North Carolina
Principle Electronic Design Engr for Cypress Semiconductor at San Jose, California
Upcoming Events
NVIDIA’s GPU Technology Conference (GTC) at San Jose McEnery Convention Center 150 West San Carlos Street San Jose CA - Mar 26 - 29, 2018
ESC Conference Boston at boston MA - Apr 18 - 19, 2018
IEEE Women in Engineering International Leadership Conference at 150 W San Carlos St San Jose CA - May 21 - 22, 2018

Internet Business Systems © 2018 Internet Business Systems, Inc.
25 North 14th Steet, Suite 710, San Jose, CA 95112
+1 (408) 882-6554 — Contact Us, or visit our other sites:
AECCafe - Architectural Design and Engineering TechJobsCafe - Technical Jobs and Resumes GISCafe - Geographical Information Services  MCADCafe - Mechanical Design and Engineering ShareCG - Share Computer Graphic (CG) Animation, 3D Art and 3D Models
  Privacy PolicyAdvertise