eMemory NeoFuse IP Qualified in 40nm EHV Process

Hsinchu, Taiwan, May 23, 2016 – eMemory today announces the immediate availability of its OTP technology NeoFuse qualified in the 40nm Embedded High Voltage (EHV) process, and customers have already embedded NeoFuse IP to tape out for mass production. Logic NVM solutions are the standard offering for trimming and setting purposes for Liquid Crystal Display (LCD) Driver IC and Organic Light Emitting Diode (OLED) Driver IC in the EHV process. For this reason, NeoFuse IP is expected to be embedded widely in modern display-related applications.

The NeoFuse IP in the 40nm EHV process with dual voltage supply delivers the same performance as NeoFuse IP has already offered in other process nodes. In the 40nm EHV process, the operation voltage can be as low as 1.8V. Such low-voltage operation facilitates early readiness for data setting and trimming before the driver IC becomes active. 

Over the past ten years, eMemory’s logic NVM solutions have been implemented in a wide span of HV process nodes for display and touch panel related applications. As the leader of logic NVM IP providers in HV process, eMemory has maintained close relationships with both IP users and foundry partners in order to verify eMemory’s logic NVM solutions at an early stage of process development – and the 40nm EHV process node is no exception. 

In addition to eMemory being the first IP provider to deliver a logic NVM solution in the 40nm EHV process, this quarter NeoFuse technology will also be qualified in 40nm High Voltage (HV) process of other global leading foundries. Close collaboration with foundry partners to enable the early readiness of logic NVM IPs has always been, and will always be, eMemory’s top priority.




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