Toshiba Debuts New 2-in-1 MOSFETs for Load Switching in Mobile Devices

Feature Industry-Leading Low On-Resistance in a Small Package

IRVINE, Calif., March 10, 2016 — (PRNewswire) —   Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, today announced the introduction of new 2-in-1 MOSFETs: the SSM6L61NU and SSM6N61NU.  The new MOSFETs are housed in the small SOT-1118 (UDFN6) package and feature excellent heat dissipation and low drain-source on-resistance, making them suitable for use as power management switches and DC-DC converters in a variety of mobile devices, including smart phones and tablets. They can also be used in battery management applications and for load switching in applications with USB Type-C interfaces.

Toshiba Corporation logo

The SSM6L61NU is a complementary device and the SSM6N61NU is a dual N-ch device. Toshiba has achieved industry-leading1 N-ch on-resistance of 25 mΩ in the new MOSFETs, contributing to reduced power loss in power supplies and extending the operation time of battery-driven devices. Additionally, a small package size improves the power dissipation rating and reduces the footprint by 50 percent when compared with MOSFETs housed in a PS-8 package – enabling smaller sets.

When used in applications with USB Type-C interfaces, the SSM6L61NU and SSM6N61NU can be placed between the Vout (output voltage)  from the PMIC and SoC – or other part of the circuitry.

Key Features:

  • Industry leading low on-resistance: RDS(ON)=25 mΩ (typ.) @N-ch, VGS=4.5 V
  • Small size SOT-1118 package and highly allowable power dissipation rating (UDFN6, 2.0×2.0 mm, PD=1 W)

Main Specifications: SSM6L61NU, SSM6N61NU  (@T a=25 °C)

Part number

Polarity

Absolute maximum ratings

RDS (ON) typ. (mΩ)

 

Ciss typ. (pF)

Package

VDSS (V)

VGSS (V)

ID (A)

|VGS|=

1.5 V

|VGS|=

1.8 V

|VGS|=

2.5 V

|VGS|=

4.5 V

SSM6L61NU

N-ch + P-ch

20

±8

4

54

40

31

25

410

SOT-1118 (UFDN6)

-20

±12

-4

-

83

60

44

480

SSM6N61NU

N-ch + N-ch

20

±8

4

54

40

31

25

410

SOT-1118 (UFDN6)

 

Toshiba's new MOSFETs feature excellent heat dissipation and low drain-source on-resistance

Pricing and Availability
Toshiba's new 2-in-1 MOSFETs are available now. Please contact your local Toshiba Sales Office for samples.

Notes


1.

Compared to an N-ch of UDFN6 package product, according to a survey by Toshiba (as of November 2015).

*About TAEC
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, VARs, distributors and fabless chip companies worldwide.  A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, solid state drives (SSDs), hard disk drives (HDDs), solid state hybrid drives (SSHDs), discrete devices, custom SoCs/ASICs, imaging products, microcontrollers, wireless components, mobile peripheral devices, advanced materials and medical tubes that make possible today's leading smartphones, tablets, cameras, medical devices, automotive electronics, industrial applications, enterprise solutions and more.

Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor, solid state drive and hard disk drive manufacturer and the world's seventh largest semiconductor manufacturer (Gartner, 2015 Worldwide Semiconductor Revenue, January, 2016). Founded in Tokyo in 1875, Toshiba is at the heart of a global network of over 580 consolidated companies employing over 199,000 people worldwide. Visit Toshiba's web site at http://toshiba.semicon-storage.com .

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