Avalanche's STT-MRAM sample memory device is a 32/64Mbit stand-alone discrete with an industry standard SPI interface built on a 55nm-node foundry process. Drop-in compatible with SPI interfaces, the Avalanche STT-MRAM delivers the best combined attributes among existing memory technologies (DRAM, SRAM, Flash) with the added benefits of scalability beyond 10nm node, high performance with unlimited endurance and low power. In addition to its stand-alone products, Avalanche is also offering its STT-MRAM technology (AvRAM™) under license as embedded memory for integrated SOC designs.
"STT-MRAM has enormous market opportunities due to its speed and endurance as a replacement for volatile memories such as SRAM and DRAM. Moving to a non-volatile memory architecture will make significant changes in computer architectures," said Thomas Coughlin, president of Coughlin Associates, a data storage consultancy. "Avalanche's pMTJ STT-MRAM broadens the available sources for STT-MRAM and brings these products closer to general availability."
"While there are in-plane based MTJ MRAM technologies sampling today, further breakthrough is expected to broaden STT-MRAM to higher volume addressing more cost-sensitive applications," said Petro Estakhri, founder, president and CEO of Avalanche. "Perpendicular-based MTJ along with high volume 300mm production are key aspects of commercializing this technology. From day one, our STT-MRAM was designed with pMTJ combined with low cost manufacturing to address this market demand."
"We would like to congratulate Avalanche Technology for this achievement," said Junro Sakai, president of Canon Anelva Corporation. "It's been an honor to closely collaborate with Avalanche and support its efforts and we wish to keep this momentum going. This is undoubtedly very encouraging news for all of us in the industry."
The core technology of the Avalanche STT-MRAM is proprietary perpendicular magnetic tunnel junction (pMTJ) cells. These pMTJ cells are comprised of a magnetic 'pinned' layer, an MgO barrier layer for high and low resistance generation, and another magnetic 'storage' layer. The magnetization orientation of the pinned layer is permanently fixed during operation, and that of the storage layer is not. Magnetization of the storage layer changes it perpendicular direction based on the direction of the electrical current being applied and flowing through the pMTJ cell.
Perpendicular MTJ requires less real estate than STT-MRAM implementations with current generation in-plane MTJ cell design. Avalanche has amassed an arsenal of patents in key areas such as pMTJ cell design, manufacturing, pMTJ operation, STT-MRAM circuit design and STT-MRAM integration at system level, which enables smaller cell size, faster read/write performance and scalability to future technology nodes, as well as system architecture and implementation.
OEMs and Partners can request more information by contacting Avalanche at Email Contact.
About Avalanche Technology
Avalanche is a disruptive memory technology company based in Fremont, CA. The company has developed next generation non-volatile memory technology to enable key discrete and embedded applications in mobile, storage, computing, networking and telecommunications. Backed by top-tier investors and led by a veteran management team, Avalanche has amassed a distinctive portfolio of more than 225 cell, circuit, process and system patents. With its stand-alone memory components and licensing business, Avalanche is addressing a total market opportunity of more than $35 billion. Visit www.avalanche-technology.com for more information. Twitter: @followavalanche.
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SOURCE Avalanche Technology, Inc.
|Avalanche Technology, Inc.