Vishay Intertechnology’s New Fast Body Diode N-Channel MOSFETs Improve Reliability, Save Energy in Soft Switching Topologies

MALVERN, Pa. — (BUSINESS WIRE) — May 22, 2015 — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced three new devices in its new 600 V EF Series of fast body diode n-channel power MOSFETs. With low reverse recovery charge and on-resistance, the Vishay Siliconix SiHx21N60EF, SiHx47N60EF, and SiHx70N60EF increase reliability and save energy in industrial, telecom, computing, and renewable energy applications.

Built on second-generation superjunction technology, the 600 V fast body diode MOSFETs released today provide a complement to Vishay's existing standard E Series components, expanding the company’s offering to devices that can be used in zero voltage switching (ZVS)/soft switching topologies such as phase-shifted bridges and LLC converter half bridges.

The SiHx21N60EF, SiHx47N60EF, and SiHx70N60EF increase reliability in these applications by offering a 10x lower reverse recovery charge (Qrr) than standard MOSFETs. This allows the devices to regain the ability to block the full breakdown voltage more quickly, helping to avoid failure from shoot-through and thermal overstress.

The 21 A SiHx21N60EF is offered in four packages, while the 47 A SiHx47N60EF and 70 A SiHx70N60EF are each available in two. The devices feature ultra-low on-resistance of 176 mΩ, 65 mΩ, and 38 mΩ, respectively, and low gate charge. These values translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including solar inverters, server and telecom power systems, ATX/Silver box PC SMPS, welding equipment, UPS, battery chargers, and semiconductor capital equipment.

The devices are designed to withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100 % UIS testing. The MOSFETs are RoHS-compliant and halogen-free.

 

Device Specification Table:

Part number

 

VDS (V)
(minimum)

 

ID (A)
@ 25 °C

 

RDS(on) (mΩ) @ 10
V (maximum)

 

QG (nC) @ 10
V (typical)

 

Package

SiHP21N60EF

 

600

  21   176   56   TO-220

SiHB21N60EF

  600   21   176   56   TO-263

SiHA21N60EF

  600   21   176   56   Thin lead TO-220F

SiHG21N60EF

  600   21   176   56   TO-247AC

SiHG47N60EF

  600   47   65   152   TO-247AC

SiHW47N60EF

  600   47   65   152   TO-247AD

SiHG70N60EF

  600   70   38   253   TO-247AC

SiHW70N60EF

  600   70   38   253   TO-247AD
         

1 | 2  Next Page »



Review Article Be the first to review this article
Featured Video
Editorial
Peggy AycinenaWhat Would Joe Do?
by Peggy Aycinena
Qualcomm’s Lu Dai: Energetic leadership for Accellera
More Editorial  
Jobs
Sr. Staff Design SSD ASIC Engineer for Toshiba America Electronic Components. Inc. at San Jose, CA
Technical Support Engineer for EDA Careers at Freemont, CA
SOC Logic Design Engineer for Global Foundaries at Santa Clara, CA
Principal Engineer FPGA Design for Intevac at Santa Clara, CA
Development Engineer-WEB SKILLS +++ for EDA Careers at North Valley, CA
Upcoming Events
IoT Summit 2017 at Great America ballroom, Santa Clara Convention Center Santa Clara CA - Mar 16 - 17, 2017
SNUG Silicon Valley 2017 at Santa Clara Convention Center Santa Clara CA - Mar 22 - 23, 2017
CDNLive Silicon Valley 2017 at Santa Clara Convention Center Santa Clara CA - Apr 11 - 12, 2017
10th Anniversary of Cyber-Physical Systems Week at Pittsburgh, PA, USA PA - Apr 18 - 21, 2017



Internet Business Systems © 2017 Internet Business Systems, Inc.
595 Millich Dr., Suite 216, Campbell, CA 95008
+1 (408)-337-6870 — Contact Us, or visit our other sites:
AECCafe - Architectural Design and Engineering TechJobsCafe - Technical Jobs and Resumes GISCafe - Geographical Information Services  MCADCafe - Mechanical Design and Engineering ShareCG - Share Computer Graphic (CG) Animation, 3D Art and 3D Models
  Privacy Policy