Vishay Intertechnology’s New Fast Body Diode N-Channel MOSFETs Improve Reliability, Save Energy in Soft Switching Topologies

MALVERN, Pa. — (BUSINESS WIRE) — May 22, 2015 — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced three new devices in its new 600 V EF Series of fast body diode n-channel power MOSFETs. With low reverse recovery charge and on-resistance, the Vishay Siliconix SiHx21N60EF, SiHx47N60EF, and SiHx70N60EF increase reliability and save energy in industrial, telecom, computing, and renewable energy applications.

Built on second-generation superjunction technology, the 600 V fast body diode MOSFETs released today provide a complement to Vishay's existing standard E Series components, expanding the company’s offering to devices that can be used in zero voltage switching (ZVS)/soft switching topologies such as phase-shifted bridges and LLC converter half bridges.

The SiHx21N60EF, SiHx47N60EF, and SiHx70N60EF increase reliability in these applications by offering a 10x lower reverse recovery charge (Qrr) than standard MOSFETs. This allows the devices to regain the ability to block the full breakdown voltage more quickly, helping to avoid failure from shoot-through and thermal overstress.

The 21 A SiHx21N60EF is offered in four packages, while the 47 A SiHx47N60EF and 70 A SiHx70N60EF are each available in two. The devices feature ultra-low on-resistance of 176 mΩ, 65 mΩ, and 38 mΩ, respectively, and low gate charge. These values translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including solar inverters, server and telecom power systems, ATX/Silver box PC SMPS, welding equipment, UPS, battery chargers, and semiconductor capital equipment.

The devices are designed to withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100 % UIS testing. The MOSFETs are RoHS-compliant and halogen-free.

 

Device Specification Table:

Part number

 

VDS (V)
(minimum)

 

ID (A)
@ 25 °C

 

RDS(on) (mΩ) @ 10
V (maximum)

 

QG (nC) @ 10
V (typical)

 

Package

SiHP21N60EF

 

600

  21   176   56   TO-220

SiHB21N60EF

  600   21   176   56   TO-263

SiHA21N60EF

  600   21   176   56   Thin lead TO-220F

SiHG21N60EF

  600   21   176   56   TO-247AC

SiHG47N60EF

  600   47   65   152   TO-247AC

SiHW47N60EF

  600   47   65   152   TO-247AD

SiHG70N60EF

  600   70   38   253   TO-247AC

SiHW70N60EF

  600   70   38   253   TO-247AD
         

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