MACOM’s NPT2022 Supports CW, Pulsed and Linear Operation Up to 100 W
LOWELL, Mass. — (BUSINESS WIRE) — May 20, 2015 — M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, today announced the new NPT2022, a wideband transistor optimized for DC-2 GHz operation and built using a proprietary Gallium Nitride (GaN) on Silicon (Si) process.
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For more information on MACOM’s expanding GaN portfolio and recently announced Gen4 GaN technology, please visit booth 2839 at the IMS 2015 tradeshow in Phoenix, Arizona, May 19th – May 21st.
The NPT2022 supports CW, pulsed and linear operation, boasting output levels up to 100 W or 50 dBm. This device provides customers 20 dB of gain and 60% drain efficiency at 900 MHz when operated at 50 volts. This HEMT D-Mode transistor is available in an industry standard plastic package with bolt down flange. The NPT2022 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L/S-band radar.
“The NPT2022 features advanced RF performance in a plastic package powered by MACOM’s unique GaN on silicon technology,” said Gary Lopes, Senior Product Director, MACOM. “The technical performance of MACOM’s NPT2022 complements our expanding GaN portfolio, which offers the industry the best performance, gain, efficiency and low cost products available on the market.”
MACOM continues to shatter the barriers to mainstream GaN adoption by delivering superior technical performance products below LDMOS cost structures. MACOM offers the industry’s broadest portfolio, frequency range, power levels and packaging, crafting the industry’s only true dual-sourcing capability.
The table below outlines typical performance:
|Small Signal Gain||dB||21|
|Saturated Output Power||dBm||50.5|