Analog Devices Silicon SPDT Switch Delivers Fast Settling Time for Demanding Test and Measurement Applications

NORWOOD, Mass. — (BUSINESS WIRE) — May 20, 2015Analog Devices, Inc. (ADI) today introduced an absorptive single-pole, double-throw (SPDT) switch specified for the 9-KHz to 13-GHz frequency band, with high isolation of 48 dB and low insertion-loss of 0.6 dB at 8-GHz operation. The HMC1118LP3DE is the first offering within ADI’s new RF and microwave control product portfolio to exhibit the inherent advantages of silicon process technology, which offers critical advantages over legacy GaAs (gallium-arsenide) RF switches. These advantages include a settling time that is one hundred times faster than GaAs, robust ESD (electro-static discharge) protection (2000 V vs. 250 V compared to GaAs), and the ability to extend the switch’s low frequency-end one thousand times lower than GaAs while maintaining high linearity.

This Smart News Release features multimedia. View the full release here:

The HMC1118LP3DE also offers industry-leading RF power handling of 4 W in through and 0.5 W in hot-switching operating modes. Hot-switching power handling is more than two times better than competitive parts with similar RF bandwidth, which allows engineers to increase allowed RF power in their applications and systems without the risk of damage to the part. The HMC1118LP3DE is optimized for high-isolation and extremely flat transfer characteristics within a wide operating frequency range up to 13 GHz, while maintaining high signal fidelity down to 9 kHz. The combination of features suits the switch for demanding test and measurement, automated test equipment, defense electronics, and wireless communication applications as a lower cost alternative to legacy GaAs switches.

HMC1118LP3DE SPDT Switch Key Features

  • Non-reflective 50-ohm design
  • Positive control : 0/+3.3 V
  • Low insertion loss: 0.68 dB at 8 GHz
  • High isolation: 50 dB at 8 GHz
  • Low-cut off frequency of 9 KHz
  • Fast settling time of 7.5 usec for 0.05-dB of final RF output level
  • Industry-leading high-power handling:
    • 35.5-dBm through path
    • 27-dBm terminated path and hot-switching case
  • High linearity:
    • P1dB: +37 dBm typical
    • IIP3: +61 dBm typical
  • ESD rating: 2-KV HBM

Pricing and Availability


Price Each per

HMC1118LP3DE     $6.18    

3-mm × 3-mm


1 | 2  Next Page »

Review Article Be the first to review this article


Featured Video
Manager, Field Applications Engineering for Real Intent at Sunnyvale, CA
Upcoming Events
SEMICON Europe at Grenoble France - Oct 25 - 27, 2016
ARM TechCon 2016 at Santa Clara Convention Center Santa Clara CA - Oct 25 - 27, 2016
Call For Proposals Now Open! at Santa Clara Convention Center, Santa Clara, CA California CA - Oct 25 - 27, 2016
DeviceWerx - 2016 at Green Valley Ranch Casino & Resort Las Vegas NV - Nov 3 - 4, 2016
DownStream: Solutions for Post Processing PCB Designs
Verific: SystemVerilog & VHDL Parsers
TrueCircuits: UltraPLL

Internet Business Systems © 2016 Internet Business Systems, Inc.
595 Millich Dr., Suite 216, Campbell, CA 95008
+1 (408)-337-6870 — Contact Us, or visit our other sites:
AECCafe - Architectural Design and Engineering TechJobsCafe - Technical Jobs and Resumes GISCafe - Geographical Information Services  MCADCafe - Mechanical Design and Engineering ShareCG - Share Computer Graphic (CG) Animation, 3D Art and 3D Models
  Privacy Policy