Application Note Demonstrates NI AWR Design Environment Load-Pull Technology for the Design of Wideband High-Efficiency PAs

EL SEGUNDO, Calif. – April 15, 2015  -- NI (formerly AWR Corporation) announces a new application note titled “ Using NI AWR Design Environment Load-Pull Simulation for the Designer of Wideband High-Efficiency PAs” that explores the design of power amplifiers (PAs) leveraging load-pull technology within NI AWR Design Environment™ software, specifically that of Microwave Office. Using a Cree CGH40010F gallium nitride high-electron mobility transistor in a Class F PA at 2000 MHz as the example circuit, the application note details how power-added efficiency is maximized by optimizing source and load pull at the fundamental frequency, plus second and third harmonics. Additionally, the ability of the load-pull technique to inspect transistor voltage and current waveforms helps users gain confidence in their high performance designs.

Where:

“Using NI AWR Design Environment Load-Pull Simulation for the Designer of Wideband High-Efficiency PAs” application note is found online at awrcorp.com/solutions/technical-papers.

When:

Immediately.

AWR, Microwave Office, National Instruments, NI and ni.com are trademarks of National Instruments. Other product and company names listed are trademarks or trade names of their respective companies.




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