EL SEGUNDO, Calif. – April 15, 2015 -- NI (formerly AWR Corporation) announces a new application note titled “ Using NI AWR Design Environment Load-Pull Simulation for the Designer of Wideband High-Efficiency PAs” that explores the design of power amplifiers (PAs) leveraging load-pull technology within NI AWR Design Environment™ software, specifically that of Microwave Office. Using a Cree CGH40010F gallium nitride high-electron mobility transistor in a Class F PA at 2000 MHz as the example circuit, the application note details how power-added efficiency is maximized by optimizing source and load pull at the fundamental frequency, plus second and third harmonics. Additionally, the ability of the load-pull technique to inspect transistor voltage and current waveforms helps users gain confidence in their high performance designs.
“Using NI AWR Design Environment Load-Pull Simulation for the Designer of Wideband High-Efficiency PAs” application note is found online at awrcorp.com/solutions/technical-papers.
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