Northrop Grumman Successfully Completes Qualification of a Radiation Hardened 1Mbit EEPROM Nonvolatile Memory

LINTHICUM, Md., March 23, 2015 — (PRNewswire) —  Northrop Grumman Corporation (NYSE: NOC) recently completed qualification testing of the W28C0108 1Mbit electrically erasable programmable read-only memory (EEPROM) semiconductor device for radiation-hardened space applications.

Northrop Grumman Corporation logo

Radiation hardened EEPROMs have long been used in space to hold critical mission data for decades without excessive shielding, rewrite circuits or climate controls.

Key features of the company's semiconductor device include latch-up immune operation in a space environment, greater than 10,000 endurance cycles, less than 250 nanosecond READ access time, 300 krad (Si) total ionizing dose and Joint Electron Device Engineering Council (JEDEC) pin-compatibility in the center 32 pins. The device is a 1Mbit, 128K x 8 bit CMOS (complementary metal oxide semiconductor) EEPROM, based on Northrop Grumman's existing 256 kB EEPROM part (W28C256) and operates across the full military temperature range.

Results indicate that memory retention at 125 degrees C will last for more than 200 years, which is well beyond the current state of the art for nonvolatile memory chips. The device was manufactured at Northrop Grumman's Advanced Technology Laboratories and was designed in cooperation with Sandia National Laboratories in Albuquerque, N.M.

The device underwent dynamic life testing at 150 degrees C for 1,000 hours, as well as heavy ion latch-up and other testing.

Northrop Grumman is currently taking orders for this product.  A copy of the part qualification data package is available upon request via the Northrop Grumman website.

Northrop Grumman is a leading global security company providing innovative systems, products and solutions in unmanned systems, cyber, C4ISR, and logistics and modernization to government and commercial customers worldwide.  Please visit http://www.northropgrumman.com for more information.

Logo - http://photos.prnewswire.com/prnh/20121024/LA98563LOGO

 

To view the original version on PR Newswire, visit: http://www.prnewswire.com/news-releases/northrop-grumman-successfully-completes-qualification-of-a-radiation-hardened-1mbit-eeprom-nonvolatile-memory-300054370.html

SOURCE Northrop Grumman Corporation

Contact:
Northrop Grumman Corporation
Kelli Kraig, 410-765-3433
Email Contact
Web: http://www.northropgrumman.com




Review Article Be the first to review this article
Featured Video
Editorial
Peggy AycinenaWhat Would Joe Do?
by Peggy Aycinena
Qualcomm’s Lu Dai: Energetic leadership for Accellera
More Editorial  
Jobs
Development Engineer-WEB SKILLS +++ for EDA Careers at North Valley, CA
Principal Engineer FPGA Design for Intevac at Santa Clara, CA
Technical Marketing Manager Valley for EDA Careers at San Jose, CA
SOC Logic Design Engineer for Global Foundaries at Santa Clara, CA
FAE FIELD APPLICATIONS SAN DIEGO for EDA Careers at San Diego, CA
Sr. Staff Design SSD ASIC Engineer for Toshiba America Electronic Components. Inc. at San Jose, CA
Upcoming Events
IoT Summit 2017 at Great America ballroom, Santa Clara Convention Center Santa Clara CA - Mar 16 - 17, 2017
SNUG Silicon Valley 2017 at Santa Clara Convention Center Santa Clara CA - Mar 22 - 23, 2017
CDNLive Silicon Valley 2017 at Santa Clara Convention Center Santa Clara CA - Apr 11 - 12, 2017
10th Anniversary of Cyber-Physical Systems Week at Pittsburgh, PA, USA PA - Apr 18 - 21, 2017



Internet Business Systems © 2017 Internet Business Systems, Inc.
595 Millich Dr., Suite 216, Campbell, CA 95008
+1 (408)-337-6870 — Contact Us, or visit our other sites:
AECCafe - Architectural Design and Engineering TechJobsCafe - Technical Jobs and Resumes GISCafe - Geographical Information Services  MCADCafe - Mechanical Design and Engineering ShareCG - Share Computer Graphic (CG) Animation, 3D Art and 3D Models
  Privacy Policy